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Article: Charge-Density-Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS3

TitleCharge-Density-Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS<inf>3</inf>
Authors
Keywordschalcogenides
charge density wave
electrical oscillations
quasi-1D
resistive switching
Issue Date2023
Citation
Advanced Electronic Materials, 2023, v. 9, n. 11, article no. 2300461 How to Cite?
AbstractPhase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal-to-insulator or charge density wave (CDW) transitions such as VO2 and 1T-TaS2 have demonstrated voltage oscillations due to their robust bi-state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current-induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS3 as a promising CDW material for future electronic device applications, especially for energy-efficient neuromorphic computing.
Persistent Identifierhttp://hdl.handle.net/10722/335462
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Huandong-
dc.contributor.authorWang, Nan-
dc.contributor.authorLiu, Hefei-
dc.contributor.authorWang, Han-
dc.contributor.authorRavichandran, Jayakanth-
dc.date.accessioned2023-11-17T08:26:07Z-
dc.date.available2023-11-17T08:26:07Z-
dc.date.issued2023-
dc.identifier.citationAdvanced Electronic Materials, 2023, v. 9, n. 11, article no. 2300461-
dc.identifier.urihttp://hdl.handle.net/10722/335462-
dc.description.abstractPhase change materials, which show different electrical characteristics across the phase transitions, have attracted considerable research attention for their potential electronic device applications. Materials with metal-to-insulator or charge density wave (CDW) transitions such as VO2 and 1T-TaS2 have demonstrated voltage oscillations due to their robust bi-state resistive switching behavior with some basic neuronal characteristics. BaTiS3 is a small bandgap ternary chalcogenide that has recently reported the emergence of CDW order below 245 K. Here, the discovery of DC voltage / current-induced reversible threshold switching in BaTiS3 devices between a CDW phase and a room temperature semiconducting phase is reported. The resistive switching behavior is consistent with a Joule heating scheme and sustained voltage oscillations with a frequency of up to 1 kHz are demonstrated by leveraging the CDW phase transition and the associated negative differential resistance. Strategies of reducing channel sizes and improving thermal management may further improve the device's performance. The findings establish BaTiS3 as a promising CDW material for future electronic device applications, especially for energy-efficient neuromorphic computing.-
dc.languageeng-
dc.relation.ispartofAdvanced Electronic Materials-
dc.subjectchalcogenides-
dc.subjectcharge density wave-
dc.subjectelectrical oscillations-
dc.subjectquasi-1D-
dc.subjectresistive switching-
dc.titleCharge-Density-Wave Resistive Switching and Voltage Oscillations in Ternary Chalcogenide BaTiS<inf>3</inf>-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/aelm.202300461-
dc.identifier.scopuseid_2-s2.0-85171642288-
dc.identifier.volume9-
dc.identifier.issue11-
dc.identifier.spagearticle no. 2300461-
dc.identifier.epagearticle no. 2300461-
dc.identifier.eissn2199-160X-
dc.identifier.isiWOS:001122252000001-

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