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- Publisher Website: 10.1109/IEDM19574.2021.9720703
- Scopus: eid_2-s2.0-85126963530
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Conference Paper: Monolithic 3D \mu-LED displays through BEOL integration of large-Area MoS2 TFT matrix
Title | Monolithic 3D \mu-LED displays through BEOL integration of large-Area MoS<inf>2</inf>TFT matrix |
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Authors | |
Issue Date | 2021 |
Citation | Technical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 9.4.1-9.4.4 How to Cite? |
Abstract | Using low-Temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution \mu-LED displays driven by large-Area CVD MoS2 thin-film transistors (TFTs). The MoS2 transistors exhibit maximum and median mobility of 73 and 54 cm2 V-1s-1, drive current over 200 \mu rm{A}/\mu rm{m}, and excellent uniformity by systematic process innovation and optimization. Benefiting from high-performance TFT, the individual TFT-LED (1T-1D) cell delivers low operating voltage and high luminance of 7.1\times 10{7} cd/m2, which satisfies various display applications to the high resolution and brightness limit. We further demonstrate prototypical 32\times 32 active-matrix (AM) displays at 1270 PPI resolution. |
Persistent Identifier | http://hdl.handle.net/10722/336312 |
ISSN | 2020 SCImago Journal Rankings: 0.827 |
DC Field | Value | Language |
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dc.contributor.author | Meng, Wanqing | - |
dc.contributor.author | Xu, Feifan | - |
dc.contributor.author | Shen, Xue | - |
dc.contributor.author | Tao, Tao | - |
dc.contributor.author | Yu, Zhihao | - |
dc.contributor.author | Wen, Kaichuan | - |
dc.contributor.author | Wang, Jianpu | - |
dc.contributor.author | Qin, Feng | - |
dc.contributor.author | Tu, Xuecou | - |
dc.contributor.author | Ning, Jing | - |
dc.contributor.author | Wang, Dong | - |
dc.contributor.author | Zheng, Youdou | - |
dc.contributor.author | Liu, Bin | - |
dc.contributor.author | Zhang, Rong | - |
dc.contributor.author | Shi, Yi | - |
dc.contributor.author | Wang, Xinran | - |
dc.date.accessioned | 2024-01-15T08:25:28Z | - |
dc.date.available | 2024-01-15T08:25:28Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | Technical Digest - International Electron Devices Meeting, IEDM, 2021, v. 2021-December, p. 9.4.1-9.4.4 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/336312 | - |
dc.description.abstract | Using low-Temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution \mu-LED displays driven by large-Area CVD MoS2 thin-film transistors (TFTs). The MoS2 transistors exhibit maximum and median mobility of 73 and 54 cm2 V-1s-1, drive current over 200 \mu rm{A}/\mu rm{m}, and excellent uniformity by systematic process innovation and optimization. Benefiting from high-performance TFT, the individual TFT-LED (1T-1D) cell delivers low operating voltage and high luminance of 7.1\times 10{7} cd/m2, which satisfies various display applications to the high resolution and brightness limit. We further demonstrate prototypical 32\times 32 active-matrix (AM) displays at 1270 PPI resolution. | - |
dc.language | eng | - |
dc.relation.ispartof | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.title | Monolithic 3D \mu-LED displays through BEOL integration of large-Area MoS<inf>2</inf>TFT matrix | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IEDM19574.2021.9720703 | - |
dc.identifier.scopus | eid_2-s2.0-85126963530 | - |
dc.identifier.volume | 2021-December | - |
dc.identifier.spage | 9.4.1 | - |
dc.identifier.epage | 9.4.4 | - |