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- Publisher Website: 10.1002/anie.202303335
- Scopus: eid_2-s2.0-85153408214
- PMID: 36964955
- WOS: WOS:000975237500001
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Article: A BN‐Doped U‐Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory
Title | A BN‐Doped U‐Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory |
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Authors | |
Keywords | Boron-Nitrogen Charge Trapping Memory Polycyclic Aromatic Hydrocarbon Supramolecular-Doped Polymer |
Issue Date | 25-Apr-2023 |
Publisher | Wiley |
Citation | Angewandte Chemie International Edition, 2023, v. 62, n. 22 How to Cite? |
Abstract | Two wide-band gap U-shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN-) |
Persistent Identifier | http://hdl.handle.net/10722/340855 |
ISSN | 2021 Impact Factor: 16.823 2020 SCImago Journal Rankings: 5.831 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yu, Yang | - |
dc.contributor.author | Wang, Le | - |
dc.contributor.author | Lin, Dongqing | - |
dc.contributor.author | Rana, Shammi | - |
dc.contributor.author | Mali, Kunal S | - |
dc.contributor.author | Ling, Haifeng | - |
dc.contributor.author | Xie, Linghai | - |
dc.contributor.author | de Feyter, Steven | - |
dc.contributor.author | Liu, Junzhi | - |
dc.date.accessioned | 2024-03-11T10:47:49Z | - |
dc.date.available | 2024-03-11T10:47:49Z | - |
dc.date.issued | 2023-04-25 | - |
dc.identifier.citation | Angewandte Chemie International Edition, 2023, v. 62, n. 22 | - |
dc.identifier.issn | 1433-7851 | - |
dc.identifier.uri | http://hdl.handle.net/10722/340855 | - |
dc.description.abstract | <p>Two wide-band gap U-shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN-)<br>doping (BN-1 and C-1) were synthesized to tune the electronic features to suit the performance requirements for organic field-effect transistor memory (OFET-NVM). The chemical structures were characterized by scanning tunneling microscopy and single-crystal diffraction. Owing to the electron-donor effect of N and the high electron affinity of B, the BN-1-based OFET-NVM displays large ambipolar memory windows and an enhanced charge storage density compared to C-1 and most reported small molecules. A novel supramolecular system formed from BN-1 and PMMA contributes to fabricating uniform films with homogeneous microstructures, which serve as a two-in-one tunnelling dielectric and charge-trapping layer to realize long-term charge retention and reliable endurance. Our results demonstrate that both BN doping and supramolecular engineering are crucial for the charge trapping of OFET-NVM.<br></p> | - |
dc.language | eng | - |
dc.publisher | Wiley | - |
dc.relation.ispartof | Angewandte Chemie International Edition | - |
dc.subject | Boron-Nitrogen | - |
dc.subject | Charge Trapping Memory | - |
dc.subject | Polycyclic Aromatic Hydrocarbon | - |
dc.subject | Supramolecular-Doped Polymer | - |
dc.title | A BN‐Doped U‐Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/anie.202303335 | - |
dc.identifier.pmid | 36964955 | - |
dc.identifier.scopus | eid_2-s2.0-85153408214 | - |
dc.identifier.volume | 62 | - |
dc.identifier.issue | 22 | - |
dc.identifier.eissn | 1521-3773 | - |
dc.identifier.isi | WOS:000975237500001 | - |
dc.identifier.issnl | 1433-7851 | - |