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Article: A study of various oxide/silicon interfaces by Ar + backsurface bombardment

TitleA study of various oxide/silicon interfaces by Ar + backsurface bombardment
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 4, p. 2253-2256 How to Cite?
AbstractA low-energy (550 eV) argon beam is used to bombard the backsurfaces of 6 kinds of metal–oxide–semiconductor capacitors, and the resulting effects on their interface characteristics are then investigated. The gate oxide of these capacitors includes thermal oxide, trichloroethyene (TCE) oxide, NH3-nitrided oxide, reoxidized-nitrided oxide, rapid-thermal-nitrided oxide, and N2O-nitrided oxide. Measurements show that for bombardment times up to 45 min the interface-state density of all the devices, in general, decreases with increasing bombardment time/dose, and the midgap energy at the silicon surface tends to rise. Moreover, the bombardment is more effective in reducing acceptor-type than donor-type interface states. On the other hand, the change of fixed-charge density is more complex. For TCE, N2O-nitrided and reoxidized-nitrided oxides, fixed-charge density decreases initially with increasing bombardment time, but then increases, while the trend is reversed for the other gate oxides. A model with stress compensation and weak bond breaking is suggested to explain the results. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42107
ISSN
2019 Impact Factor: 2.286
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:08Z-
dc.date.available2007-01-08T02:29:08Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 4, p. 2253-2256-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42107-
dc.description.abstractA low-energy (550 eV) argon beam is used to bombard the backsurfaces of 6 kinds of metal–oxide–semiconductor capacitors, and the resulting effects on their interface characteristics are then investigated. The gate oxide of these capacitors includes thermal oxide, trichloroethyene (TCE) oxide, NH3-nitrided oxide, reoxidized-nitrided oxide, rapid-thermal-nitrided oxide, and N2O-nitrided oxide. Measurements show that for bombardment times up to 45 min the interface-state density of all the devices, in general, decreases with increasing bombardment time/dose, and the midgap energy at the silicon surface tends to rise. Moreover, the bombardment is more effective in reducing acceptor-type than donor-type interface states. On the other hand, the change of fixed-charge density is more complex. For TCE, N2O-nitrided and reoxidized-nitrided oxides, fixed-charge density decreases initially with increasing bombardment time, but then increases, while the trend is reversed for the other gate oxides. A model with stress compensation and weak bond breaking is suggested to explain the results. ©1999 American Institute of Physics.en_HK
dc.format.extent75455 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 85 n. 4, p. 2253-2256 and may be found at https://doi.org/10.1063/1.369534-
dc.subjectPhysics engineeringen_HK
dc.titleA study of various oxide/silicon interfaces by Ar + backsurface bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=4&spage=2253&epage=2256&date=1999&atitle=A+study+of+various+oxide/silicon+interfaces+by+Ar+++backsurface+bombardmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.369534en_HK
dc.identifier.scopuseid_2-s2.0-0038123794-
dc.identifier.hkuros44787-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038123794&selection=ref&src=s&origin=recordpage-
dc.identifier.volume85-
dc.identifier.issue4-
dc.identifier.spage2253-
dc.identifier.epage2256-
dc.identifier.isiWOS:000078403000038-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridLi, GQ=7407050307-
dc.identifier.scopusauthoridHuang, MQ=7404259759-
dc.identifier.scopusauthoridZeng, SH=7202412592-
dc.identifier.scopusauthoridCheng, YC=27167728600-

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