File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer

TitleEffect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer
Authors
Xu, SJLiu, WLi, MF
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 77 n. 21, p. 3376-3378 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1327617
AbstractFirst-order and second-order longitudinal optical (LO) phonon-assisted luminescence lines of neutral donor-bound excitons and free excitons in heteroepitaxial GaN film have been investigated in temperature range from 3.5 to 50 K. The energy spacing between the exciton resonant lines and their corresponding LO phonon replicas is found to be strong temperature dependent. Permogorov's theory on LO phonon-assisted luminescence of free excitons could be employed to explain the main experiments. It is also found that the interaction strength of the free exciton with LO phonon is stronger than that of the bound exciton with LO phonon. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42197
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000165395900020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLiu, Wen_HK
dc.contributor.authorLi, MFen_HK
dc.date.accessioned2007-01-08T02:31:27Z-
dc.date.available2007-01-08T02:31:27Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 77 n. 21, p. 3376-3378-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42197-
dc.description.abstractFirst-order and second-order longitudinal optical (LO) phonon-assisted luminescence lines of neutral donor-bound excitons and free excitons in heteroepitaxial GaN film have been investigated in temperature range from 3.5 to 50 K. The energy spacing between the exciton resonant lines and their corresponding LO phonon replicas is found to be strong temperature dependent. Permogorov's theory on LO phonon-assisted luminescence of free excitons could be employed to explain the main experiments. It is also found that the interaction strength of the free exciton with LO phonon is stronger than that of the bound exciton with LO phonon. © 2000 American Institute of Physics.en_HK
dc.format.extent55350 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 77 n. 21, p. 3376-3378 and may be found at https://doi.org/10.1063/1.1327617-
dc.subjectPhysics engineeringen_HK
dc.titleEffect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layeren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=77&issue=21&spage=3376&epage=3378&date=2000&atitle=Effect+of+temperature+on+longitudinal+optical+phonon-assisted+exciton+luminescence+in+heteroepitaxial+GaN+layeren_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1327617en_HK
dc.identifier.scopuseid_2-s2.0-0001618378en_HK
dc.identifier.hkuros55899-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001618378&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume77en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3376en_HK
dc.identifier.epage3378en_HK
dc.identifier.isiWOS:000165395900020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLiu, W=36078712200en_HK
dc.identifier.scopusauthoridLi, MF=7405260803en_HK
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats