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Article: Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN

TitleEvidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 7, p. 1033-1035 How to Cite?
AbstractThe study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.
Persistent Identifierhttp://hdl.handle.net/10722/42211
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLu, XHen_HK
dc.contributor.authorYu, PYen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-08T02:31:43Z-
dc.date.available2007-01-08T02:31:43Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 7, p. 1033-1035-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42211-
dc.description.abstractThe study of photoluminescence spectra of a series of thin, undoped, hexagonal GaN films containing cubic GaN inclusions grown by molecular-beam epitaxy on 6H-SiC was presented. It was shown that an emission peak at ∼3.17 eV in thin, hexagonal GaN films exhibits behaviors typical of a spatially indirect transition. The values of the band offsets extracted from the data were in good agreement with theoretical predictions.en_HK
dc.format.extent116792 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 82 n. 7, p. 1033-1035 and may be found at https://doi.org/10.1063/1.1541113-
dc.subjectPhysics engineeringen_HK
dc.titleEvidence for a Type-II band alignment between cubic and hexagonal phases of GaNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=7&spage=1033&epage=1035&date=2003&atitle=Evidence+for+a+Type-II+band+alignment+between+cubic+and+hexagonal+phases+of+GaNen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1541113en_HK
dc.identifier.scopuseid_2-s2.0-0037450215en_HK
dc.identifier.hkuros75729-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037450215&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1033en_HK
dc.identifier.epage1035en_HK
dc.identifier.isiWOS:000180917000011-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLu, XH=12799008300en_HK
dc.identifier.scopusauthoridYu, PY=7403599447en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0003-6951-

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