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Article: Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface

TitleInterpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 84 n. 13, p. 2280-2282 How to Cite?
AbstractThe anomalous temperature dependence of anti-Stokes photoluminescence (ASPL) at the GaInP2/GaAs interface was studied. A localized state luminescence model was employed to interpret the temperature-dependence of the peak position of the ASPL. The results show that the localization of the up-converted carriers plays an important role in radiative recombination producing the ASPL. The studies also show that the microscopic mechanism of thermal quenching of ASPL at GaInP2/GaAs interface is unmasked.
Persistent Identifierhttp://hdl.handle.net/10722/42223
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorDong, JRen_HK
dc.contributor.authorChua, SJen_HK
dc.date.accessioned2007-01-08T02:31:56Z-
dc.date.available2007-01-08T02:31:56Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 84 n. 13, p. 2280-2282-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42223-
dc.description.abstractThe anomalous temperature dependence of anti-Stokes photoluminescence (ASPL) at the GaInP2/GaAs interface was studied. A localized state luminescence model was employed to interpret the temperature-dependence of the peak position of the ASPL. The results show that the localization of the up-converted carriers plays an important role in radiative recombination producing the ASPL. The studies also show that the microscopic mechanism of thermal quenching of ASPL at GaInP2/GaAs interface is unmasked.en_HK
dc.format.extent51733 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 84 n. 13, p. 2280-2282 and may be found at https://doi.org/10.1063/1.1691496-
dc.subjectPhysics engineeringen_HK
dc.titleInterpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=84&issue=13&spage=2280&epage=2282&date=2004&atitle=Interpretation+of+anomalous+temperature+dependence+of+anti-Stokes+photoluminescence+at+GaInP2/GaAs+interfaceen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1691496en_HK
dc.identifier.scopuseid_2-s2.0-2142770329en_HK
dc.identifier.hkuros85821-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2142770329&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume84en_HK
dc.identifier.issue13en_HK
dc.identifier.spage2280en_HK
dc.identifier.epage2282en_HK
dc.identifier.isiWOS:000220591500020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridDong, JR=7403365338en_HK
dc.identifier.scopusauthoridChua, SJ=35516064500en_HK
dc.identifier.issnl0003-6951-

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