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Article: Refractive index of InGaN/GaN quantum well
Title | Refractive index of InGaN/GaN quantum well |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 1998 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 How to Cite? |
Abstract | In this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42389 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Leung, MMY | en_HK |
dc.contributor.author | Djuriŝić, AB | en_HK |
dc.contributor.author | Li, EH | en_HK |
dc.date.accessioned | 2007-01-29T08:48:39Z | - |
dc.date.available | 2007-01-29T08:48:39Z | - |
dc.date.issued | 1998 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42389 | - |
dc.description.abstract | In this article, the optical properties of the In xGa 1-xN/GaN quantum well (QW) are investigated. The refractive index spectrum of a QW is essential to the design and implementation of optoelectronic devices. Yet, the refractive index of the InGaN/GaN QW system over a wide spectral range has been unavailable so far. This article presents a comprehensive model, which includes the exciton effect and most of the major critical points, to calculate the complex index of refraction of the InGaN/GaN QW at room temperature. The calculations have been performed for QW's with various alloy compositions and well widths in the spectral range from 1 to 9 eV. The model presented here fully considers transitions near the band edge and above barrier gap contributions. © 1998 American Institute of Physics. | en_HK |
dc.format.extent | 138017 bytes | - |
dc.format.extent | 28672 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/msword | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1998, v. 84 n. 11, p. 6312-6317 and may be found at https://doi.org/10.1063/1.368954 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Refractive index of InGaN/GaN quantum well | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=84&issue=11&spage=6312&epage=6317&date=1998&atitle=Refractive+index+of+InGaN/GaN+quantum+well | en_HK |
dc.identifier.email | Djuriŝić, AB: dalek@hku.hk | en_HK |
dc.identifier.authority | Djuriŝić, AB=rp00690 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.368954 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0000522945 | en_HK |
dc.identifier.hkuros | 45893 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0000522945&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 84 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | 6312 | en_HK |
dc.identifier.epage | 6317 | en_HK |
dc.identifier.isi | WOS:000076930100072 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Leung, MMY=7201943377 | en_HK |
dc.identifier.scopusauthorid | Djuriŝić, AB=7004904830 | en_HK |
dc.identifier.scopusauthorid | Li, EH=7201410087 | en_HK |
dc.identifier.issnl | 0021-8979 | - |