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Article: A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes

TitleA comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 13, p. 1629-1631 How to Cite?
AbstractWe report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. ©1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42785
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMutamba, Ken_HK
dc.contributor.authorSigurdardottir, Aen_HK
dc.contributor.authorVogt, Aen_HK
dc.contributor.authorHartnagel, HLen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-03-23T04:32:09Z-
dc.date.available2007-03-23T04:32:09Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 13, p. 1629-1631-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42785-
dc.description.abstractWe report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. ©1998 American Institute of Physics.en_HK
dc.format.extent448800 bytes-
dc.format.extent31232 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1998, v. 72 n. 13, p. 1629-1631 and may be found at https://doi.org/10.1063/1.121135-
dc.subjectPhysics engineeringen_HK
dc.titleA comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=72&issue=13&spage=1629&epage=1631&date=1998&atitle=A+comparative+study+of+uniaxial+pressure+effects+in+intraband+AlGaAs/GaAs+and+interband+InAs/AlSb/GaSb+resonant+tunneling+diodesen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.121135en_HK
dc.identifier.scopuseid_2-s2.0-0012544608-
dc.identifier.hkuros38028-
dc.identifier.volume72-
dc.identifier.issue13-
dc.identifier.spage1629-
dc.identifier.epage1631-
dc.identifier.isiWOS:000072760100036-

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