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Article: Surface structure of epitaxial Gd(0001) films on W(110) studied by quantitative LEED analysis

TitleSurface structure of epitaxial Gd(0001) films on W(110) studied by quantitative LEED analysis
Authors
KeywordsPhysics
Issue Date1995
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 1995, v. 51 n. 15, p. 10201-10204 How to Cite?
AbstractThe surface structure of thick (400 Å) Gd(0001) films, epitaxially grown on W(110), is investigated by low-energy electron-diffraction (LEED) IV measurements in combination with dynamical LEED calculations. A first-layer contraction of 2.4% and a second-layer spacing expansion of 1% is found. These findings are in good agreement with literature values determined for the (0001) surface of bulk Gd crystals. No significant difference in the LEED IV data is found between films grown at room temperature and films grown at elevated temperatures.
Persistent Identifierhttp://hdl.handle.net/10722/43172
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGiergiel, Jen_HK
dc.contributor.authorPang, AWen_HK
dc.contributor.authorHopster, Hen_HK
dc.contributor.authorGuo, Xen_HK
dc.contributor.authorTong, DSYen_HK
dc.contributor.authorWeller, Den_HK
dc.date.accessioned2007-03-23T04:40:39Z-
dc.date.available2007-03-23T04:40:39Z-
dc.date.issued1995en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 1995, v. 51 n. 15, p. 10201-10204en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43172-
dc.description.abstractThe surface structure of thick (400 Å) Gd(0001) films, epitaxially grown on W(110), is investigated by low-energy electron-diffraction (LEED) IV measurements in combination with dynamical LEED calculations. A first-layer contraction of 2.4% and a second-layer spacing expansion of 1% is found. These findings are in good agreement with literature values determined for the (0001) surface of bulk Gd crystals. No significant difference in the LEED IV data is found between films grown at room temperature and films grown at elevated temperatures.en_HK
dc.format.extent592686 bytes-
dc.format.extent29184 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 1995 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.51.10201-
dc.subjectPhysicsen_HK
dc.titleSurface structure of epitaxial Gd(0001) films on W(110) studied by quantitative LEED analysisen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=51&issue=15&spage=10201&epage=10204&date=1995&atitle=Surface+structure+of+epitaxial+Gd(0001)+films+on+W(110)+studied+by+quantitative+LEED+analysisen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.51.10201en_HK
dc.identifier.scopuseid_2-s2.0-0005689894-
dc.identifier.hkuros20476-
dc.identifier.isiWOS:A1995QV23700100-
dc.identifier.issnl0163-1829-

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