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Article: Electron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximation

TitleElectron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximation
Authors
Panda, BKLiMing, WFung, SBeling, CD
KeywordsPhysics
Issue Date1997
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter), 1997, v. 56 n. 12, p. 7356-7362 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.56.7356
AbstractThe positron annihilation characteristics have been calculated taking the electron-positron correlation in the generalized gradient approximation (GGA). The calculated electron-positron momentum distributions in Si along the [110] direction in the GGA scheme agree very well with the experiment. The comparison of anisotropies of the momentum distributions along different crystal directions with the theory shows that only the GGA scheme gives the exact values. The enhancement factor for the valence electrons in the electron-positron momentum density is found to be weakly dependent on the momentum. The positron lifetimes in group IV, III-V, and II-VI semiconductors agree very well with the previous calculations and the experiment.
Persistent Identifierhttp://hdl.handle.net/10722/43209
ISSN
0163-1829
ISI Accession Number ID
WOS:A1997YA57500046
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorLiMing, Wen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-03-23T04:41:21Z-
dc.date.available2007-03-23T04:41:21Z-
dc.date.issued1997en_HK
dc.identifier.citationPhysical Review B (Condensed Matter), 1997, v. 56 n. 12, p. 7356-7362-
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43209-
dc.description.abstractThe positron annihilation characteristics have been calculated taking the electron-positron correlation in the generalized gradient approximation (GGA). The calculated electron-positron momentum distributions in Si along the [110] direction in the GGA scheme agree very well with the experiment. The comparison of anisotropies of the momentum distributions along different crystal directions with the theory shows that only the GGA scheme gives the exact values. The enhancement factor for the valence electrons in the electron-positron momentum density is found to be weakly dependent on the momentum. The positron lifetimes in group IV, III-V, and II-VI semiconductors agree very well with the previous calculations and the experiment.en_HK
dc.format.extent119640 bytes-
dc.format.extent28160 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter)-
dc.rightsCopyright 1997 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.56.7356-
dc.subjectPhysicsen_HK
dc.titleElectron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0163-1829&volume=56&issue=12&spage=7356&epage=7362&date=1997&atitle=Electron-positron+momentum+distributions+and+positron+lifetime+in+semiconductors+in+the+generalized+gradient+approximationen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.56.7356en_HK
dc.identifier.scopuseid_2-s2.0-0542384979en_HK
dc.identifier.hkuros28857-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0542384979&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume56en_HK
dc.identifier.issue12en_HK
dc.identifier.spage7356en_HK
dc.identifier.epage7362en_HK
dc.identifier.isiWOS:A1997YA57500046-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridLiMing, W=24401511900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0163-1829-

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