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Conference Paper: Surface treatments of indium-tin-oxide substrates: Comprehensive investigation of mechanical, chemical, thermal, and plasma treatments

TitleSurface treatments of indium-tin-oxide substrates: Comprehensive investigation of mechanical, chemical, thermal, and plasma treatments
Authors
KeywordsIndium-tin-oxide
Organic light emitting diodes
Issue Date2002
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Organic Light-Emitting Materials and Devices V, San Diego, USA, 30 July-1 August 2001. In Proceedings of SPIE, 2002, v. 4464, p. 273-280 How to Cite?
AbstractVarious surface treatments significantly affect the work function and surface roughness of indium tin oxide (ITO), and thusly influence charge injection and overall performance of organic light emitting diodes (OLEDs). Large number of treatments, most commonly oxygen plasma treatment and UV-ozone treatment, have been proposed to improve characteristics of ITO. In this work, we have investigated a) mechanical treatments (mechanical rubbing, followed by ultrasonic bath), b) chemical treatments (dipping into aqueous solutions of various acids, including acids which have not been investigated previously) c) thermal treatments (thermal annealing in different atmospheres) d) plasma treatments e) UV ozone treatment f) different combinations of the above. We have measured surface sheet resistance of the samples and investigated surface morphology of the treated samples and compared them to "as-received" samples. We have selected several treatments giving best results. Then we have fabricated OLEDs using ITO substrates treated with treatments selected, as well as a control OLED fabricated on "as-received" ITO. The impact of ITO treatments on the performance of OLEDs have been investigated on two types of devices, OLEDs with and without transport layer, having the structures glass/ITO/Alq 3/Al and glass/ITOFrPD/Alq 3/Al, respectively, where Alq 3 (tris-(8-hydroxyquinoline) aluminum) is emitting layer and TPD (N,N′-diphenyl-N,N′-bis(3-methyl-phenyl)-1, 1′ biphenil-4,4′diamine) is a hole transport layer.
Persistent Identifierhttp://hdl.handle.net/10722/45699
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorLau, TWen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorGuo, WLen_HK
dc.contributor.authorBai, YKen_HK
dc.contributor.authorHerbert Li, Een_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2007-10-30T06:33:00Z-
dc.date.available2007-10-30T06:33:00Z-
dc.date.issued2002en_HK
dc.identifier.citationOrganic Light-Emitting Materials and Devices V, San Diego, USA, 30 July-1 August 2001. In Proceedings of SPIE, 2002, v. 4464, p. 273-280-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/45699-
dc.description.abstractVarious surface treatments significantly affect the work function and surface roughness of indium tin oxide (ITO), and thusly influence charge injection and overall performance of organic light emitting diodes (OLEDs). Large number of treatments, most commonly oxygen plasma treatment and UV-ozone treatment, have been proposed to improve characteristics of ITO. In this work, we have investigated a) mechanical treatments (mechanical rubbing, followed by ultrasonic bath), b) chemical treatments (dipping into aqueous solutions of various acids, including acids which have not been investigated previously) c) thermal treatments (thermal annealing in different atmospheres) d) plasma treatments e) UV ozone treatment f) different combinations of the above. We have measured surface sheet resistance of the samples and investigated surface morphology of the treated samples and compared them to "as-received" samples. We have selected several treatments giving best results. Then we have fabricated OLEDs using ITO substrates treated with treatments selected, as well as a control OLED fabricated on "as-received" ITO. The impact of ITO treatments on the performance of OLEDs have been investigated on two types of devices, OLEDs with and without transport layer, having the structures glass/ITO/Alq 3/Al and glass/ITOFrPD/Alq 3/Al, respectively, where Alq 3 (tris-(8-hydroxyquinoline) aluminum) is emitting layer and TPD (N,N′-diphenyl-N,N′-bis(3-methyl-phenyl)-1, 1′ biphenil-4,4′diamine) is a hole transport layer.en_HK
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dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2002 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.457486-
dc.subjectIndium-tin-oxideen_HK
dc.subjectOrganic light emitting diodesen_HK
dc.titleSurface treatments of indium-tin-oxide substrates: Comprehensive investigation of mechanical, chemical, thermal, and plasma treatmentsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4464&spage=273&epage=280&date=2001&atitle=Surface+treatments+of+indium+tin+oxide+substrates:+comprehensive+investigation+of+mechanical,+chemical,+thermal,+and+plasma+treatmentsen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.457486en_HK
dc.identifier.scopuseid_2-s2.0-0036396745en_HK
dc.identifier.hkuros72533-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036396745&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume4464en_HK
dc.identifier.spage273en_HK
dc.identifier.epage280en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridLau, TW=36920289100en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridGuo, WL=7401967943en_HK
dc.identifier.scopusauthoridBai, YK=36084084600en_HK
dc.identifier.scopusauthoridHerbert Li, E=6506152591en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK

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