Phase modulator defined by impurities induced disordering

Abstract

Optical waveguide type phase modulators defined by impurities induced disordering (IID) are investigated. To achieve a better optical confinement, a two steps ion implantation process is carried out to introduce additional impurities with respect to depth in the cladding region. A more uniform refractive index profile in deeper lateral confined region is obtained after thermal annealing. The refractive index different between the core and cladding can be adjusted by controlling the extension of interdiffusion in the cladding. This provide tuning of single mode operating region. For present IID phase modulator with 25 period of 100 angstroms/100 angstroms Al0.3Ga0.7As/GaAs multiple quantum wells single mode operating at 0.88 μm, a normalized phase shift of 362°/Vmm, chirping parameter of 47, and absorption loss less than 120 cm-1 are achieved theoretically.