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Conference Paper: Bandstructure of Interdiffused InGaN/GaN Quantum Well

TitleBandstructure of Interdiffused InGaN/GaN Quantum Well
Authors
KeywordsBandstructure
Quantum well
Interdiffusion
Wurtzite 111-nitride
InGaN/GaN
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Optoelectronic Materials and Devices, Taipei, Taiwan, China, 9-11 July 1998. In Proceedings of SPIE, 1998, v. 3419, p. 317-324 How to Cite?
AbstractQuantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero- interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LED and laser of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89eV to 3.44eV. InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we will present the band structure of strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.
Persistent Identifierhttp://hdl.handle.net/10722/46140
ISSN

 

DC FieldValueLanguage
dc.contributor.authorCheung, EMTen_HK
dc.contributor.authorChan, MCYen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2007-10-30T06:43:21Z-
dc.date.available2007-10-30T06:43:21Z-
dc.date.issued1998en_HK
dc.identifier.citationOptoelectronic Materials and Devices, Taipei, Taiwan, China, 9-11 July 1998. In Proceedings of SPIE, 1998, v. 3419, p. 317-324-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/46140-
dc.description.abstractQuantum well composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero- interface. The intermixed structures created by both impurity induced and impurity-free vacancy promoted processes have recently attracted high attention. In recent years, blue green LED and laser of III-nitride semiconductors have attracted a large amount of interest. This is mainly due to its large bandgap range from 1.89eV to 3.44eV. InGaN/GaN single quantum well structures have been used to achieve high lumens blue and green light emitting diodes. In this paper, we will present the band structure of strained InGaN/GaN single quantum well under the influence of interdiffusion. Band structure is a fundamental aspect in determining the electronic and optical properties of the materials such as optical gain, refractive index, absorption, etc.en_HK
dc.format.extent341869 bytes-
dc.format.extent1960 bytes-
dc.format.extent14323 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 1998 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.311023-
dc.subjectBandstructureen_HK
dc.subjectQuantum wellen_HK
dc.subjectInterdiffusionen_HK
dc.subjectWurtzite 111-nitrideen_HK
dc.subjectInGaN/GaNen_HK
dc.titleBandstructure of Interdiffused InGaN/GaN Quantum Wellen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=3419&spage=317&epage=324&date=1998&atitle=Bandstructure+of+Interdiffused+InGaN/GaN+Quantum+Wellen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.311023en_HK
dc.identifier.scopuseid_2-s2.0-0032402495-
dc.identifier.hkuros45603-

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