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Conference Paper: Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire
Title | Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire |
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Authors | |
Keywords | Physics |
Issue Date | 2004 |
Publisher | American Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfm |
Citation | The 2004 March Meeting opf the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 534, abstract no. K1.044 How to Cite? |
Abstract | The depth and lateral dependent carrier concentration of un-intentionally doped GaN film grown on sapphire substrate have been studied by temperature-dependent Hall effect measurement, confocal micro-Raman spectroscopy and capacitance-voltage (C-V) measurements. The depth-dependent free carrier concentration extracted from the depth-profiled Raman spectra confirms a non-uniform spatial distribution of free carriers in the GaN film with a highly conductive layer of ~1 m thickness near the GaN/sapphire boundary. The temperature dependent Hall data have been analyzed using two-layer model to extract the carrier concentration in the GaN bulk film and in the parallel conduction channel adjacent to the GaN/sapphire boundary. The carrier concentrations of the two layers derived from the Raman technique and the Hall measurements agree with each other. The lateral-dependent carrier concentration of the 2-inch GaN epitaxial wafer has also been studied by micro-Raman spectroscopy and C-V measurements. The line-shape fitting of the Raman A1(LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared well with a lateral-dependent carrier concentration map of the wafer revealed by C-V measurements. The study in the article indicates that Raman spectroscopy of the LO phonon-plasmon mode can be used as a nondestructive and reliable, in situ diagnostic for GaN wafer production. |
Persistent Identifier | http://hdl.handle.net/10722/47043 |
ISSN |
DC Field | Value | Language |
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dc.contributor.author | Huang, Y | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, SHY | en_HK |
dc.contributor.author | Ling, FCC | en_HK |
dc.date.accessioned | 2007-10-30T07:05:09Z | - |
dc.date.available | 2007-10-30T07:05:09Z | - |
dc.date.issued | 2004 | en_HK |
dc.identifier.citation | The 2004 March Meeting opf the American Physical Society, Montreal, QC., Canada, 22-26 March 2004. In Bulletin of the American Physical Society, 2004, v. 49, p. 534, abstract no. K1.044 | en_HK |
dc.identifier.issn | 0003-0503 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/47043 | - |
dc.description.abstract | The depth and lateral dependent carrier concentration of un-intentionally doped GaN film grown on sapphire substrate have been studied by temperature-dependent Hall effect measurement, confocal micro-Raman spectroscopy and capacitance-voltage (C-V) measurements. The depth-dependent free carrier concentration extracted from the depth-profiled Raman spectra confirms a non-uniform spatial distribution of free carriers in the GaN film with a highly conductive layer of ~1 m thickness near the GaN/sapphire boundary. The temperature dependent Hall data have been analyzed using two-layer model to extract the carrier concentration in the GaN bulk film and in the parallel conduction channel adjacent to the GaN/sapphire boundary. The carrier concentrations of the two layers derived from the Raman technique and the Hall measurements agree with each other. The lateral-dependent carrier concentration of the 2-inch GaN epitaxial wafer has also been studied by micro-Raman spectroscopy and C-V measurements. The line-shape fitting of the Raman A1(LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data are compared well with a lateral-dependent carrier concentration map of the wafer revealed by C-V measurements. The study in the article indicates that Raman spectroscopy of the LO phonon-plasmon mode can be used as a nondestructive and reliable, in situ diagnostic for GaN wafer production. | - |
dc.format.extent | 271574 bytes | - |
dc.format.extent | 1036577 bytes | - |
dc.format.extent | 5932 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Physical Society. The Journal's web site is located at https://www.aps.org/meetings/baps/index.cfm | en_HK |
dc.relation.ispartof | Bulletin of the American Physical Society | - |
dc.rights | Copyright 2004 by The American Physical Society. | en_HK |
dc.subject | Physics | en_HK |
dc.title | Spatial distribution of carrier concentration in un-doped GaN film grown on sapphire | en_HK |
dc.type | Conference_Paper | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.hkuros | 85837 | - |
dc.identifier.issnl | 0003-0503 | - |