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Article: Synthesizing tungsten oxide nanowires by a thermal evaporation method

TitleSynthesizing tungsten oxide nanowires by a thermal evaporation method
Authors
Hong, KXie, MHu, RWu, H
KeywordsPhysics engineering
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 17, article no. 173121 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2734175
AbstractTungsten oxide W18 O49 nanowires with diameters of 10-20 nm were synthesized with high yield by thermal evaporation in a tube furnace. By heating tungsten trioxide powder at 900 °C in vacuum (5× 10-3 torr), W18 O49 nanowires with diameters of 10-20 nm and lengths up to micrometers were produced with high yield on the Au-coated Si substrates located in the low temperature zone (550-600 °C) of the furnace. The morphology, composition, and crystal structure of the nanowires were characterized by various methods. The conditions and the mechanism of W18 O49 nanowire growth are discussed. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/57326
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000246568600112
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHong, Ken_HK
dc.contributor.authorXie, Men_HK
dc.contributor.authorHu, Ren_HK
dc.contributor.authorWu, Hen_HK
dc.date.accessioned2010-04-12T01:33:15Z-
dc.date.available2010-04-12T01:33:15Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 17, article no. 173121-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/57326-
dc.description.abstractTungsten oxide W18 O49 nanowires with diameters of 10-20 nm were synthesized with high yield by thermal evaporation in a tube furnace. By heating tungsten trioxide powder at 900 °C in vacuum (5× 10-3 torr), W18 O49 nanowires with diameters of 10-20 nm and lengths up to micrometers were produced with high yield on the Au-coated Si substrates located in the low temperature zone (550-600 °C) of the furnace. The morphology, composition, and crystal structure of the nanowires were characterized by various methods. The conditions and the mechanism of W18 O49 nanowire growth are discussed. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2007, v. 90 n. 17, article no. 173121 and may be found at https://doi.org/10.1063/1.2734175-
dc.subjectPhysics engineeringen_HK
dc.titleSynthesizing tungsten oxide nanowires by a thermal evaporation methoden_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=90&issue=17&spage=173121&epage=1 &date=2007&atitle=Synthesizing+tungsten+oxide+nanowires+by+a+thermal+evaporation+methoden_HK
dc.identifier.emailXie, M: mhxie@hku.hken_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, M=rp00818en_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2734175en_HK
dc.identifier.scopuseid_2-s2.0-34248596052en_HK
dc.identifier.hkuros126732-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34248596052&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue17en_HK
dc.identifier.spagearticle no. 173121-
dc.identifier.epagearticle no. 173121-
dc.identifier.isiWOS:000246568600112-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHong, K=8657303000en_HK
dc.identifier.scopusauthoridXie, M=7202255416en_HK
dc.identifier.scopusauthoridHu, R=35242509400en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.issnl0003-6951-

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