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Conference Paper: A novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls

TitleA novel GaN photonic crystal structure comprising nanopillars with inclined sidewalls
Authors
Fu, WYWong, KKYChoi, HW
Issue Date2009
PublisherWiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html
Citation
The International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, 6-10 October 2008. In Physica Status Solidi. C, 2009, v. 6 suppl. 2, p. S639-S642 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200880827
AbstractWe demonstrate a novel design of photonic bandgap structure on GaN created using a self-assembly approach. Microsphere lithography was employed to generate a hexagonal-close-packed monolayer, which serves as an etch mask in the fabrication of the sidewalls-inclined nanopillars. To produce a photonic bandgap in this photonic crystal structure, an inclined sidewall was introduced, instead of the conventional nanopillar structures with vertical sidewalls obtained from microsphere lithography. The structure was designed with plane-wave-expansion simulations and the results verified by optical transmission, whereby a pronounced transmission dip centered at 510 nm was observed. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
DescriptionThis journal suppl. entitled: Supplement: International Workshop on Nitride Semiconductors (IWN 2008)
Persistent Identifierhttp://hdl.handle.net/10722/58729
ISSN
1862-6351
2020 SCImago Journal Rankings: 0.210
ISI Accession Number ID
WOS:000294494400088
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFu, WYen_HK
dc.contributor.authorWong, KKYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-05-31T03:35:53Z-
dc.date.available2010-05-31T03:35:53Z-
dc.date.issued2009en_HK
dc.identifier.citationThe International Workshop on Nitride semiconductors (IWN2008), Montreux, Switzerland, 6-10 October 2008. In Physica Status Solidi. C, 2009, v. 6 suppl. 2, p. S639-S642en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/58729-
dc.descriptionThis journal suppl. entitled: Supplement: International Workshop on Nitride Semiconductors (IWN 2008)-
dc.description.abstractWe demonstrate a novel design of photonic bandgap structure on GaN created using a self-assembly approach. Microsphere lithography was employed to generate a hexagonal-close-packed monolayer, which serves as an etch mask in the fabrication of the sidewalls-inclined nanopillars. To produce a photonic bandgap in this photonic crystal structure, an inclined sidewall was introduced, instead of the conventional nanopillar structures with vertical sidewalls obtained from microsphere lithography. The structure was designed with plane-wave-expansion simulations and the results verified by optical transmission, whereby a pronounced transmission dip centered at 510 nm was observed. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_HK
dc.languageengen_HK
dc.publisherWiley - VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.htmlen_HK
dc.relation.ispartofPhysica Status Solidi. C: Current Topics in Solid State Physicsen_HK
dc.titleA novel GaN photonic crystal structure comprising nanopillars with inclined sidewallsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailWong, KKY: kywong04@hkucc.hku.hken_HK
dc.identifier.emailChoi, HW: hwchoi@hku.hken_HK
dc.identifier.authorityWong, KKY=rp00189en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200880827en_HK
dc.identifier.scopuseid_2-s2.0-79251619298en_HK
dc.identifier.hkuros164109en_HK
dc.identifier.hkuros164114-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79251619298&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6en_HK
dc.identifier.issuesuppl. 2en_HK
dc.identifier.spageS639en_HK
dc.identifier.epageS642en_HK
dc.identifier.isiWOS:000294494400088-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridWong, KKY=36456599700en_HK
dc.identifier.scopusauthoridFu, WY=24481323900en_HK
dc.customcontrol.immutablesml 140723-
dc.identifier.issnl1610-1634-

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