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Article: Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect

TitleViolet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect
Authors
Li, JShi, SLWang, YJXu, SJZhao, DGZhu, JJYang, HLu, F
KeywordsAlInGaN
Electroluminescence (EL)
InGaN
Light-emitting diodes (LEDs)
Multiple quantum wells (QWs)
Issue Date2007
PublisherIEEE.
Citation
Ieee Photonics Technology Letters, 2007, v. 19 n. 10, p. 789-791 How to Cite?
DOI: http://dx.doi.org/10.1109/LPT.2007.896575
AbstractElectroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/80612
ISSN
1041-1135
2021 Impact Factor: 2.414
2020 SCImago Journal Rankings: 0.810
ISI Accession Number ID
WOS:000247353100052
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Jen_HK
dc.contributor.authorShi, SLen_HK
dc.contributor.authorWang, YJen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZhao, DGen_HK
dc.contributor.authorZhu, JJen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorLu, Fen_HK
dc.date.accessioned2010-09-06T08:08:22Z-
dc.date.available2010-09-06T08:08:22Z-
dc.date.issued2007en_HK
dc.identifier.citationIeee Photonics Technology Letters, 2007, v. 19 n. 10, p. 789-791en_HK
dc.identifier.issn1041-1135en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80612-
dc.description.abstractElectroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail. © 2007 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofIEEE Photonics Technology Lettersen_HK
dc.rights©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAlInGaNen_HK
dc.subjectElectroluminescence (EL)en_HK
dc.subjectInGaNen_HK
dc.subjectLight-emitting diodes (LEDs)en_HK
dc.subjectMultiple quantum wells (QWs)en_HK
dc.titleViolet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effecten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1041-1135&volume=19&spage=789&epage=791&date=2007&atitle=Violet+electroluminescence+of+AlInGaN-InGaN+multiquantum-well+light-emitting+diodes:+Quantum-confined+stark+effect+and+heating+effecten_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/LPT.2007.896575en_HK
dc.identifier.hkuros126838en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44049091224&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue10en_HK
dc.identifier.spage789en_HK
dc.identifier.epage791en_HK
dc.identifier.isiWOS:000247353100052-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, J=26643260400en_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridWang, YJ=7601513640en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZhao, DG=7403489944en_HK
dc.identifier.scopusauthoridZhu, JJ=8343672100en_HK
dc.identifier.scopusauthoridYang, H=7406559548en_HK
dc.identifier.scopusauthoridLu, F=25630854000en_HK
dc.identifier.issnl1041-1135-

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