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Article: Electrically induced room temperature metastability in semi-insulating GaAs

TitleElectrically induced room temperature metastability in semi-insulating GaAs
Authors
Fung, SLuo, YLBeling, CDChen, TP
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1998, v. 108 n. 12, p. 907-911 How to Cite?
AbstractAn electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay observed through conductivity measurements at room temperature. Similar, but not identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaAs/Au systems. The objective of this paper is to report on these findings. © 1998 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80812
ISSN
0038-1098
2021 Impact Factor: 1.934
2020 SCImago Journal Rankings: 0.429
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLuo, YLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorChen, TPen_HK
dc.date.accessioned2010-09-06T08:10:33Z-
dc.date.available2010-09-06T08:10:33Z-
dc.date.issued1998en_HK
dc.identifier.citationSolid State Communications, 1998, v. 108 n. 12, p. 907-911en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80812-
dc.description.abstractAn electrically induced metastable state of the Al/SI-GaAs/Al back-to-back system is reported for the first time. The state is measured by placing the system under reverse bias breakdown conditions and its transient decay observed through conductivity measurements at room temperature. Similar, but not identical metastabilities were also found on Ti/SI-GaAs/Ti and Au/SI-GaAs/Au systems. The objective of this paper is to report on these findings. © 1998 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleElectrically induced room temperature metastability in semi-insulating GaAsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0038-1098&volume=108&spage=907&epage=911&date=1998&atitle=Electrically+Induced+Room+Temperature+Metastability+in+Semi-Insulating+GaAsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0032205563en_HK
dc.identifier.hkuros39289en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032205563&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue12en_HK
dc.identifier.spage907en_HK
dc.identifier.epage911en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLuo, YL=55187936600en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.issnl0038-1098-

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