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Conference Paper: Analysis and fabrication of a new two dimensional near infrared pincushion silicon based PSD

TitleAnalysis and fabrication of a new two dimensional near infrared pincushion silicon based PSD
Authors
Qi, XLin, BLu, LJin, WCao, X
KeywordsNear Infrared
Pn Junction
Position Sensitive Detector (Psd)
Spectral Response
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, Xian, China, 2-5 November 2005. In Proceedings of SPIE - The International Society for Optical Engineering, 2006, v. 6149 How to Cite?
DOI: http://dx.doi.org/10.1117/12.674205
AbstractA new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are got with it. The effect of every layer thickness and SiO2 thickness to the spectral response is analysis and calculation. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared two dimensional pincushion PSD is designed and fabricated. Some necessary tests show that the peak spectral sensitivity of our device is 0.626 A/W at 920nm wavelength.
Persistent Identifierhttp://hdl.handle.net/10722/91146
ISSN
0277-786X
2020 SCImago Journal Rankings: 0.192

 

DC FieldValueLanguage
dc.contributor.authorQi, Xen_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorLu, Len_HK
dc.contributor.authorJin, Wen_HK
dc.contributor.authorCao, Xen_HK
dc.date.accessioned2010-09-17T10:13:43Z-
dc.date.available2010-09-17T10:13:43Z-
dc.date.issued2006en_HK
dc.identifier.citation2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, Xian, China, 2-5 November 2005. In Proceedings of SPIE - The International Society for Optical Engineering, 2006, v. 6149en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/91146-
dc.description.abstractA new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are got with it. The effect of every layer thickness and SiO2 thickness to the spectral response is analysis and calculation. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared two dimensional pincushion PSD is designed and fabricated. Some necessary tests show that the peak spectral sensitivity of our device is 0.626 A/W at 920nm wavelength.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectNear Infrareden_HK
dc.subjectPn Junctionen_HK
dc.subjectPosition Sensitive Detector (Psd)en_HK
dc.subjectSpectral Responseen_HK
dc.titleAnalysis and fabrication of a new two dimensional near infrared pincushion silicon based PSDen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.674205en_HK
dc.identifier.scopuseid_2-s2.0-33646397273en_HK
dc.identifier.volume6149en_HK
dc.identifier.issnl0277-786X-

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