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Article: Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution
Title | Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution |
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Authors | |
Keywords | Chemical Vapor Deposition Corundum Crystal Growth Gallium Alloys Gallium Nitride Metallorganic Vapor Phase Epitaxy Microscopic Examination Milling (Machining) Sapphire Semiconducting Gallium |
Issue Date | 2008 |
Publisher | Wiley - V C H Verlag GmbH & Co KGaA |
Citation | Advanced Materials, 2008, v. 20 n. 11, p. 2162-2165 How to Cite? |
Abstract | The direct observation of inversion domain boundaries (IDB) of GaN on c-Sapphire at sub-angstrom resolution was investigated. A ca. 1 μm thick GaN film was grown directly on c-sapphire at a temperature of 1030°C with a V/III ratio of around 100 by low-pressure metal-organic vapor phase epitaxy (MOVPE) process. N2 was used as dilution and carrier gas throughout the growth process. The transmission electron microscopy (TEM) specimens were prepared by the standard mechanical grinding and ion-milling method. The final step of specimen preparation was done at low voltage and high milling angle with a Fischione ion mill to minimize the artifacts introduced during specimen preparation. ADF-STEM images were taken with a VG Microscopes HB603U 300-kV STEM fitted with a Nion aberration corrector ay Oak Ridge National Laboratory, giving an expected probe size in the range of 0.8 Å. It was observed that the widely cited IDB theoretical structure can exist in reality. |
Persistent Identifier | http://hdl.handle.net/10722/91374 |
ISSN | 2023 Impact Factor: 27.4 2023 SCImago Journal Rankings: 9.191 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, F | en_HK |
dc.contributor.author | Collazo, R | en_HK |
dc.contributor.author | Mita, S | en_HK |
dc.contributor.author | Sitar, Z | en_HK |
dc.contributor.author | Pennycook, SJ | en_HK |
dc.contributor.author | Duscher, G | en_HK |
dc.date.accessioned | 2010-09-17T10:18:12Z | - |
dc.date.available | 2010-09-17T10:18:12Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Advanced Materials, 2008, v. 20 n. 11, p. 2162-2165 | en_HK |
dc.identifier.issn | 0935-9648 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/91374 | - |
dc.description.abstract | The direct observation of inversion domain boundaries (IDB) of GaN on c-Sapphire at sub-angstrom resolution was investigated. A ca. 1 μm thick GaN film was grown directly on c-sapphire at a temperature of 1030°C with a V/III ratio of around 100 by low-pressure metal-organic vapor phase epitaxy (MOVPE) process. N2 was used as dilution and carrier gas throughout the growth process. The transmission electron microscopy (TEM) specimens were prepared by the standard mechanical grinding and ion-milling method. The final step of specimen preparation was done at low voltage and high milling angle with a Fischione ion mill to minimize the artifacts introduced during specimen preparation. ADF-STEM images were taken with a VG Microscopes HB603U 300-kV STEM fitted with a Nion aberration corrector ay Oak Ridge National Laboratory, giving an expected probe size in the range of 0.8 Å. It was observed that the widely cited IDB theoretical structure can exist in reality. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Wiley - V C H Verlag GmbH & Co KGaA | en_HK |
dc.relation.ispartof | Advanced Materials | en_HK |
dc.subject | Chemical Vapor Deposition | en_HK |
dc.subject | Corundum | en_HK |
dc.subject | Crystal Growth | en_HK |
dc.subject | Gallium Alloys | en_HK |
dc.subject | Gallium Nitride | en_HK |
dc.subject | Metallorganic Vapor Phase Epitaxy | en_HK |
dc.subject | Microscopic Examination | en_HK |
dc.subject | Milling (Machining) | en_HK |
dc.subject | Sapphire | en_HK |
dc.subject | Semiconducting Gallium | en_HK |
dc.title | Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Liu, F:fordliu@hku.hk | en_HK |
dc.identifier.authority | Liu, F=rp01358 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/adma.200702522 | en_HK |
dc.identifier.scopus | eid_2-s2.0-55049120844 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-55049120844&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 20 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | 2162 | en_HK |
dc.identifier.epage | 2165 | en_HK |
dc.identifier.isi | WOS:000257044600025 | - |
dc.publisher.place | Germany | en_HK |
dc.identifier.scopusauthorid | Liu, F=11038795100 | en_HK |
dc.identifier.scopusauthorid | Collazo, R=6701729383 | en_HK |
dc.identifier.scopusauthorid | Mita, S=8535369100 | en_HK |
dc.identifier.scopusauthorid | Sitar, Z=7004338257 | en_HK |
dc.identifier.scopusauthorid | Pennycook, SJ=36039748000 | en_HK |
dc.identifier.scopusauthorid | Duscher, G=7006023463 | en_HK |
dc.identifier.issnl | 0935-9648 | - |