Showing results 5 to 10 of 10
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Nature of the bulk defects in GaAs through high-temperature quenching studies Journal:Physical Review B (Condensed Matter) | 1996 | 110 | ||
Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics Journal:Applied Surface Science | 1997 | 169 | ||
Rapid thermal annealing induced deep level defects in Te-doped GaAs Journal:Physica Status Solidi (A) Applied Research | 1998 | 165 | ||
A simple and inexpensive circuit for emission and capture deep level transient spectroscopy Journal:Review of Scientific Instruments | 1996 | 112 | ||
The slow-positron beam facility at the University of Hong Kong Proceeding/Conference:AIP Conference Proceedings 303 Slow Positron Beam Techniques for Solid and Surfaces: Fifth International Workshop | 1994 | 108 | ||
The transformations of the EL6 deep level defect in n-GaAs: is EL6 a DX-like center? Proceeding/Conference:Materials Research Society Symposium Proceedings | 1998 | 128 |