Showing results 17 to 18 of 18
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| Title | Author(s) | Issue Date | |
|---|---|---|---|
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric Journal:IEEE Transactions on Electron Devices | 2016 | ||
A simplified post-soft-breakdown current model for MOS devices Journal:Applied Physics A: Materials Science and Processing | 2009 |