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Article: N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric

TitleN2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
Authors
KeywordsGa2O3(Gd2O3) (GGO) interlayer
Ge MOS
interface-state density
stacked gate-dielectric
Issue Date2016
Citation
IEEE Transactions on Electron Devices, 2016, v. 63, p. 2838-2843 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247385
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, Y-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:26:27Z-
dc.date.available2017-10-18T08:26:27Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Electron Devices, 2016, v. 63, p. 2838-2843-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247385-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGa2O3(Gd2O3) (GGO) interlayer-
dc.subjectGe MOS-
dc.subjectinterface-state density-
dc.subjectstacked gate-dielectric-
dc.titleN2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2016.2565691-
dc.identifier.scopuseid_2-s2.0-84971473605-
dc.identifier.hkuros279975-
dc.identifier.volume63-
dc.identifier.spage2838-
dc.identifier.epage2843-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000378607100031-
dc.identifier.issnl0018-9383-

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