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Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6975
TitleAuthor(s)Issue Date
 
Programming memristor arrays with arbitrarily high precision for analog computing
Journal:Science
Song, WenhaoRao, MingyiLi, YunningLi, CanZhuo, YeCai, FuxiWu, MingcheYin, WenboLi, ZongzeWei, QiangLee, SangsooZhu, HengfangGong, LeiBarnell, MarkWu, QingBeerel, Peter A.Chen, Mike Shuo WeiGe, NingHu, MiaoXia, QiangfeiYang, J Joshua
23-Feb-2024
 
Minimizing Output Capacitance Loss in GaN Power HEMT
Journal:IEEE Transactions on Power Electronics
Song, QihaoBriga, AdamVeprinsky, ValeryVolkov, RomanLi, QiangZhang, Yuhao
2024
 
Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
Ravi, LakshmiLiu, JianLiu, JingcunZhang, YuhaoButtay, CyrilSchmalz, StevenBurgos, RolandoDong, Dong
2023
 
Packaging of a 10-kV Double-Side Cooled Silicon Carbide Diode Module With Thin Substrates Coated by a Nonlinear Resistive Polymer-Nanoparticle Composite
Journal:IEEE Transactions on Power Electronics
Zhang, ZichenLu, ShengchangWang, BoyanZhang, YuhaoYun, NickSung, WoongjeNgo, Khai D.T.Lu, Guo Quan
2022
 
Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit
Journal:IEEE Transactions on Power Electronics
Song, QihaoYang, XinWang, BixuanLitchford, EverestSun, YiKong, PengjuLi, QiangZhang, Yuhao
2024
 
(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration
Journal:IEEE Transactions on Electron Devices
Qin, YuanMa, YunweiXiao, MingPorter, MatthewUdrea, FlorinWang, HanZhang, Yuhao
2024
 
Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET
Journal:IEEE Transactions on Electron Devices
Yang, XinShi, GuannanJin, LiyangQin, YuanPorter, MatthewJia, XiaotingDong, DongShao, LinboZhang, Yuhao
2024
 
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
Journal:Applied Physics Letters
Porter, MatthewYang, XinGong, HeheWang, BixuanYang, ZinengZhang, Yuhao
2024
 
Gallium nitride vertical power devices on foreign substrates: A review and outlook
Journal:Journal of Physics D: Applied Physics
Zhang, YuhaoDadgar, ArminPalacios, Tomás
2018
 
Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model
Journal:IEEE Transactions on Power Electronics
Wang, BixuanSong, QihaoZhang, Yuhao
2024
 
Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET
Journal:IEEE Transactions on Power Electronics
Yang, XinZhang, RuizheYang, QiuzheSong, QihaoLitchford, EverestWalker, Andy J.Pidaparthi, SubhashDrowley, CliffDong, DongLi, QiangZhang, Yuhao
2024
 
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN
Journal:IEEE Transactions on Electron Devices
Yang, ZinengMa, YunweiPorter, MatthewGong, HeheDu, ZhonghaoWang, HanLuo, YiWang, LaiZhang, Yuhao
2024
 
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga<inf>2</inf>O<inf>3</inf> Heterojunction by Edge Termination Optimization
Journal:IEEE Electron Device Letters
Gong, HeheZhou, FengXiao, MingYang, ZinengRen, Fang FangGu, ShulinLu, HaiZhang, RongZhang, YuhaoYe, Jiandong
2024
 
Ga<inf>2</inf>O<inf>3</inf>/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
Journal:Applied Physics Letters
Gong, HeheSun, NaHu, TianchengYu, XinxinPorter, MatthewYang, ZinengRen, FangfangGu, ShulinZheng, YoudouZhang, RongZhang, YuhaoYe, Jiandong
2024
 
Suppression of Enhanced Magnesium Diffusion During High-Pressure Annealing of Implanted GaN
Journal:Physica Status Solidi (A) Applications and Materials Science
Jacobs, Alan G.Feigelson, Boris N.Lundh, James S.Spencer, Joseph A.Freitas, Jaime A.Gunning, Brendan P.Kaplar, Robert J.Zhang, YuhaoTadjer, Marko J.Hobart, Karl D.Anderson, Travis J.
2024
 
Silicon Ion Implant Activation in β-(Al<inf>0.2</inf>Ga<inf>0.8</inf>)<inf>2</inf>O<inf>3</inf>
Journal:Journal of Electronic Materials
Jacobs, Alan G.Spencer, Joseph A.Tadjer, Marko J.Feigelson, Boris N.Lamb, AbbeyLee, Ming HsunPeterson, Rebecca L.Alema, FikaduOsinsky, AndreiZhang, YuhaoHobart, Karl D.Anderson, Travis J.
2024
 
Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes
Journal:IEEE Transactions on Power Electronics
Liu, JingcunZhang, RuizheXiao, MingPidaparthi, SubhashCui, HaoEdwards, AndrewBaubutr, LekDrowley, CliffZhang, Yuhao
2021
 
Revealing localized excitons in WSe<inf>2</inf>/β-Ga<inf>2</inf>O<inf>3</inf>
Journal:Applied Physics Letters
Cavalini, CamilaRabahi, Cesarde Brito, Caique S.Lee, EunjiToledo, José R.Cazetta, Felipe F.Fernandes de Oliveira, Raphael B.Andrade, Marcelo B.Henini, MohamedZhang, YuhaoKim, JeongyongBarcelos, Ingrid D.Galvão Gobato, Yara
2024
 
The 2018 GaN power electronics roadmap
Journal:Journal of Physics D: Applied Physics
Amano, H.Baines, Y.Beam, E.Borga, MatteoBouchet, T.Chalker, Paul R.Charles, M.Chen, Kevin J.Chowdhury, NadimChu, RongmingDe Santi, CarloDe Souza, Maria MerlyneDecoutere, StefaanDi Cioccio, L.Eckardt, BerndEgawa, TakashiFay, P.Freedsman, Joseph J.Guido, L.Häberlen, OliverHaynes, GeoffHeckel, ThomasHemakumara, DiliniHouston, PeterHu, JieHua, MengyuanHuang, QingyunHuang, AlexJiang, ShengKawai, H.Kinzer, DanKuball, MartinKumar, AshwaniLee, Kean BoonLi, XuMarcon, DenisMärz, MartinMcCarthy, R.Meneghesso, GaudenzioMeneghini, MatteoMorvan, E.Nakajima, A.Narayanan, E. M.S.Oliver, StephenPalacios, TomásPiedra, DanielPlissonnier, M.Reddy, R.Sun, MinThayne, IainTorres, A.Trivellin, NicolaUnni, V.Uren, Michael J.Van Hove, MarleenWallis, David J.Wang, J.Xie, J.Yagi, S.Yang, ShuYoutsey, C.Yu, RuiyangZanoni, EnricoZeltner, StefanZhang, Yuhao
2018
 
PtO<inf>x</inf> Schottky Contacts on Degenerately Doped 2¯01β-Ga<inf>2</inf>O<inf>3</inf> Substrates
Journal:Journal of Electronic Materials
Spencer, Joseph A.Jacobs, Alan G.Hobart, Karl D.Koehler, Andrew D.Anderson, Travis J.Zhang, YuhaoTadjer, Marko J.
2024
Collection's Items (Sorted by Submit Date in Descending order): 1 to 20 of 6975