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	Title	Author(s)	Issue Date
	Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors Journal:Applied Physics Letters	Chen, TP Huang, JY Tse, MS Tan, SS Ang, CH Fung, S	2003
	Power-law dependence of charge trapping on injected charge in very thin SiO 2 films Journal:Japanese Journal of Applied Physics, Part 2: Letters	Liu, Y Chen, TP Ang, CH Fung, S	2002
	A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current Journal:Applied Physics Letters	Huang, J Chen, TP Ang, CH Manju, S Fung, S	2004

Showing results 1 to 3 of 3