Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 | ||
Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm Gate Length Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2020 |