Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 | ||
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS<inf>2</inf> Heterostructures Journal:Scientific Reports | 2014 |