Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
1.2 kV vertical GaN Fin JFETs with robust avalanche and fast switching capabilities Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2020 | ||
Exceptional Repetitive-Short-Circuit Robustness of Vertical GaN Fin-JFET at High Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2022 | ||
Switching Performance Evaluation of 650 v Vertical GaN Fin JFET Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC | 2023 | ||
Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2022 |