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Showing results 1 to 6 of 6

	Title	Author(s)	Issue Date
	Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Journal:IEEE Transactions on Electron Devices	Zhang, Yuhao Sun, Min Liu, Zhihong Piedra, Daniel Lee, Hyung Seok Gao, Feng Fujishima, Tatsuya Palacios, Tomas	2013
	Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl<inf>3</inf> surface plasma treatment Journal:Applied Physics Letters	Fujishima, Tatsuya Joglekar, Sameer Piedra, Daniel Lee, Hyung Seok Zhang, Yuhao Uedono, Akira Palacios, Tomás	2013
	GaN-on-Si vertical schottky and p-n diodes Journal:IEEE Electron Device Letters	Zhang, Yuhao Sun, Min Piedra, Daniel Azize, Mohamed Zhang, Xu Fujishima, Tatsuya Palacios, Tomás	2014
	Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam Proceeding/Conference:2014 International Workshop on Junction Technology, IWJT 2014	Uedono, Akira Fujishima, Tatsuya Cao, Yu Joglekar, Sameer Piedra, Daniel Lee, Hyung Seok Zhang, Yuhao Zhang, Yang Yoshihara, Nakaaki Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomas	2014
	Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors Journal:Applied Physics Letters	Zhang, Yuhao Sun, Min Joglekar, Sameer J.Fujishima, Tatsuya Palacios, Tomás	2013
	Vacancy clusters introduced by CF<inf>4</inf>-based plasma treatment in GaN probed with a monoenergetic positron beam Journal:Applied Physics Express	Uedono, Akira Yoshihara, Nakaaki Zhang, Yuhao Sun, Min Piedra, Daniel Fujishima, Tatsuya Ishibashi, Shoji Sumiya, Masatomo Laboutin, Oleg Johnson, Wayne Palacios, Tomás	2014

Showing results 1 to 6 of 6