Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors Proceeding/Conference:Technical Digest - International Electron Devices Meeting | 2002 | ||
Germanium nanowire field-effect transistors with SiO<inf>2</inf> and high-κ HfO<inf>2</inf> gate dielectrics Journal:Applied Physics Letters | 2003 | ||
High-κ dielectrics for advanced carbon-nanotube transistors and logic gates Journal:Nature Materials | 2002 |