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	Title	Author(s)	Issue Date
	Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation Journal:IEEE Electron Device Letters	Lin, TX Li, SH Ho, LP Kuznetsov, A Lee, HN Chau, T Ling, FCC	1-Apr-2023

Showing results 1 to 1 of 1