Browsing by Author Mokler, SM

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Showing results 1 to 9 of 9
TitleAuthor(s)Issue Date
 
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy
Journal:Materials Science and Technology
Fernandez, JMXie, MHMatsumura, AMokler, SMZhang, JJoyce, BA
1995
 
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
Journal:Journal of Crystal Growth
Zhang, JZhang, XMMatsumura, AMarinopoulou, AHartung, JAnwar, NParry, GXie, MHMokler, SMFernandez, JMJoyce, BA
1995
 
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides
Journal:Surface Science
Xie, MHZhang, JMokler, SMFernández, JJoyce, BA
1994
 
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy
Journal:International Journal of Optoelectronics
Ohtani, NMokler, SMXie, MHZhang, JZhang, XJoyce, BA
1994
 
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
Journal:Journal of Crystal Growth
Mokler, SMOhtani, NXie, MHZhang, XJoyce, BA
1993
 
In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces
Journal:Applied Physics Letters
Mokler, SMOhtani, NXie, MHZhang, JJoyce, BA
1992
 
Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
Journal:Applied Physics Letters
Xie, MHZhang, JMokler, SMFernández, JMJoyce, BA
1994
 
RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures
Journal:Surface Science
Ohtani, NMokler, SMXie, MHZhang, JJoyce, BA
1993
 
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys
Journal:Applied Physics Letters
Ohtani, NMokler, SMXie, MHZhang, JJoyce, BA
1993
Showing results 1 to 9 of 9