Showing results 1 to 9 of 9
Title | Author(s) | Issue Date | Views | |
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Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy Journal:Materials Science and Technology | 1995 | 30 | ||
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1995 | 39 | ||
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides Journal:Surface Science | 1994 | 26 | ||
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics | 1994 | |||
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth | 1993 | 46 | ||
1992 | ||||
1994 | 61 | |||
1993 | 17 | |||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 60 |