Browsing by Author Qin, Yuan

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TitleAuthor(s)Issue Date
 
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
Journal:IEEE Electron Device Letters
Qin, YuanXiao, MingZhang, RuizheXie, QingyunPalacios, TomasWang, BoyanMa, YunweiKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao
2023
 
1 kV Self-Aligned Vertical GaN Superjunction Diode
Journal:IEEE Electron Device Letters
Ma, YunweiPorter, MatthewQin, YuanSpencer, JosephDu, ZhonghaoXiao, MingWang, YifanKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Udrea, FlorinTadjer, MarkoWang, HanZhang, Yuhao
2024
 
10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C
Journal:IEEE Electron Device Letters
Qin, YuanXiao, MingPorter, MatthewMa, YunweiSpencer, JosephDu, ZhonghaoJacobs, Alan G.Sasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Qin, YuanPorter, MatthewXiao, MingDu, ZhonghaoZhang, HongmingMa, YunweiSpencer, JosephWang, BoyanSong, QihaoSasaki, KoheiLin, Chia HungKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Tadjer, MarkoWang, HanZhang, Yuhao
2023
 
2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension
Journal:IEEE Electron Device Letters
Wang, BoyanXiao, MingSpencer, JosephQin, YuanSasaki, KoheiTadjer, Marko J.Zhang, Yuhao
2023
 
Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications
Journal:Advanced Materials
Liu, HefeiQin, YuanChen, Hung YuWu, JiangbinMa, JiahuiDu, ZhonghaoWang, NanZou, JingyiLin, SenZhang, XuZhang, YuhaoWang, Han
2023
 
Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices
Journal:IEEE Transactions on Electron Devices
Wang, BoyanXiao, MingZhang, ZichenWang, YifanQin, YuanSong, QihaoLu, Guo QuanNgo, KhaiZhang, Yuhao
2023
 
Enhancement-mode GaN Monolithic Bidirectional Switch with Breakdown Voltage over 3.3 kV
Journal:IEEE Electron Device Letters
Guo, YijinQin, YuanXiao, MingPorter, MatthewSong, QihaoPopa, DanielEfthymiou, LoizosCheng, KaiKravchenko, IvanShao, LinboWang, HanUdrea, FlorinZhang, Yuhao
1-Jan-2025
 
First Demonstration of High-Sensitivity (NEP&lt;1fWHz<sup>-1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga<inf>2</inf>O<inf>3</inf>Photodetectors and Oxide Thin-Film-Transistors
Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology
Qin, YuanLu, CongyanYu, ZhaoanYao, ZhihongWu, FeihongDong, DanianZhao, XiaolongXu, GuangweiZhang, YuhaoLong, ShibingLi, LingLiu, Ming
2022
 
First Demonstration of Vertical Superjunction Diode in GaN
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Xiao, MingMa, YunweiDu, ZhonghaoQin, YuanLiu, KaiCheng, KaiUdrea, FlorinXie, AndyBeam, EdwardWang, BoyanSpencer, JosephTadjer, MarkoAnderson, TravisWang, HanZhang, Yuhao
2022
 
Investigation of deep defects and their effects on the properties of NiO/β-Ga<inf>2</inf>O<inf>3</inf> heterojuncion diodes
Journal:Materials Today Electronics
Almalki, AbdulazizMadani, LabedSengouga, NouredineAlhassan, SultanAlotaibi, SaudAlhassni, AmraAlmunyif, AmjadChauhan, Jasbinder S.Henini, MohamedGaleti, Helder Vinicius AvançoGobato, Yara Galvãode Godoy, Marcio Peron FrancoAndrade, Marcelo B.Souto, SérgioZhou, HongWang, BoyanXiao, MingQin, YuanZhang, Yuhao
2023
 
NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Xiao, MingWang, BoyanZhang, RuizheSong, QihaoSpencer, JosephDu, ZhonghaoQin, YuanSasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
NiO junction termination extension for high-voltage (&gt;3 kV) Ga<inf>2</inf>O<inf>3</inf> devices
Journal:Applied Physics Letters
Xiao, MingWang, BoyanSpencer, JosephQin, YuanPorter, MatthewMa, YunweiWang, YifanSasaki, KoheiTadjer, MarkoZhang, Yuhao
2023
 
P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures
Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023
Porter, Matthew A.Ma, YunweiQin, YuanZhang, Yuhao
2023
 
Recent progress of Ga<inf>2</inf>O<inf>3</inf> power technology: large-area devices, packaging and applications
Journal:Japanese Journal of Applied Physics
Qin, YuanWang, ZhengpengSasaki, KoheiYe, JiandongZhang, Yuhao
2023
 
Stochastic fluctuation-induced cell polarization on elastic substrates: A cytoskeleton-based mechanical model
Journal:Journal of the Mechanics and Physics of Solids
Qin, YuanLi, YuhuiZhang, Li YuanXu, Guang Kui
2020
 
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Journal:Journal of Physics D: Applied Physics
Qin, YuanAlbano, BenjaminSpencer, JosephLundh, James SpencerWang, BoyanButtay, CyrilTadjer, MarkoDiMarino, ChristinaZhang, Yuhao
2023
 
(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration
Journal:IEEE Transactions on Electron Devices
Qin, YuanMa, YunweiXiao, MingPorter, MatthewUdrea, FlorinWang, HanZhang, Yuhao
2024
 
Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET
Journal:IEEE Transactions on Electron Devices
Yang, XinShi, GuannanJin, LiyangQin, YuanPorter, MatthewJia, XiaotingDong, DongShao, LinboZhang, Yuhao
2024
 
Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Porter, Matthew A.Ma, YunweiQin, YuanSrijanto, BernadetaBriggs, DayrlKravchenko, IvanZhang, Yuhao
2024
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