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Showing results 1 to 19 of 19

	Title	Author(s)	Issue Date
	1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Zhang, Ruizhe Xie, Qingyun Palacios, Tomas Wang, Boyan Ma, Yunwei Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao	2023
	1 kV Self-Aligned Vertical GaN Superjunction Diode Journal:IEEE Electron Device Letters	Ma, Yunwei Porter, Matthew Qin, Yuan Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Yifan Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Udrea, Florin Tadjer, Marko Wang, Han Zhang, Yuhao	2024
	10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Porter, Matthew Ma, Yunwei Spencer, Joseph Du, Zhonghao Jacobs, Alan G.Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
	2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, Yuan Porter, Matthew Xiao, Ming Du, Zhonghao Zhang, Hongming Ma, Yunwei Spencer, Joseph Wang, Boyan Song, Qihao Sasaki, Kohei Lin, Chia Hung Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Tadjer, Marko Wang, Han Zhang, Yuhao	2023
	2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension Journal:IEEE Electron Device Letters	Wang, Boyan Xiao, Ming Spencer, Joseph Qin, Yuan Sasaki, Kohei Tadjer, Marko J.Zhang, Yuhao	2023
	Artificial Neuronal Devices Based on Emerging Materials: Neuronal Dynamics and Applications Journal:Advanced Materials	Liu, Hefei Qin, Yuan Chen, Hung Yu Wu, Jiangbin Ma, Jiahui Du, Zhonghao Wang, Nan Zou, Jingyi Lin, Sen Zhang, Xu Zhang, Yuhao Wang, Han	2023
	Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices Journal:IEEE Transactions on Electron Devices	Wang, Boyan Xiao, Ming Zhang, Zichen Wang, Yifan Qin, Yuan Song, Qihao Lu, Guo Quan Ngo, Khai Zhang, Yuhao	2023
	First Demonstration of High-Sensitivity (NEP<1fWHz<sup>-1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga<inf>2</inf>O<inf>3</inf>Photodetectors and Oxide Thin-Film-Transistors Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Qin, Yuan Lu, Congyan Yu, Zhaoan Yao, Zhihong Wu, Feihong Dong, Danian Zhao, Xiaolong Xu, Guangwei Zhang, Yuhao Long, Shibing Li, Ling Liu, Ming	2022
	First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
	Investigation of deep defects and their effects on the properties of NiO/β-Ga<inf>2</inf>O<inf>3</inf> heterojuncion diodes Journal:Materials Today Electronics	Almalki, Abdulaziz Madani, Labed Sengouga, Nouredine Alhassan, Sultan Alotaibi, Saud Alhassni, Amra Almunyif, Amjad Chauhan, Jasbinder S.Henini, Mohamed Galeti, Helder Vinicius Avanço Gobato, Yara Galvão de Godoy, Marcio Peron Franco Andrade, Marcelo B.Souto, Sérgio Zhou, Hong Wang, Boyan Xiao, Ming Qin, Yuan Zhang, Yuhao	2023
	NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Xiao, Ming Wang, Boyan Zhang, Ruizhe Song, Qihao Spencer, Joseph Du, Zhonghao Qin, Yuan Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
	NiO junction termination extension for high-voltage (>3 kV) Ga<inf>2</inf>O<inf>3</inf> devices Journal:Applied Physics Letters	Xiao, Ming Wang, Boyan Spencer, Joseph Qin, Yuan Porter, Matthew Ma, Yunwei Wang, Yifan Sasaki, Kohei Tadjer, Marko Zhang, Yuhao	2023
	P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Porter, Matthew A.Ma, Yunwei Qin, Yuan Zhang, Yuhao	2023
	Recent progress of Ga<inf>2</inf>O<inf>3</inf> power technology: large-area devices, packaging and applications Journal:Japanese Journal of Applied Physics	Qin, Yuan Wang, Zhengpeng Sasaki, Kohei Ye, Jiandong Zhang, Yuhao	2023
	Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Journal:Journal of Physics D: Applied Physics	Qin, Yuan Albano, Benjamin Spencer, Joseph Lundh, James Spencer Wang, Boyan Buttay, Cyril Tadjer, Marko DiMarino, Christina Zhang, Yuhao	2023
	(Ultra-)Wide-Bandgap Heterogeneous Superjunction: Design, Performance Limit, and Experimental Demonstration Journal:IEEE Transactions on Electron Devices	Qin, Yuan Ma, Yunwei Xiao, Ming Porter, Matthew Udrea, Florin Wang, Han Zhang, Yuhao	2024
	Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET Journal:IEEE Transactions on Electron Devices	Yang, Xin Shi, Guannan Jin, Liyang Qin, Yuan Porter, Matthew Jia, Xiaoting Dong, Dong Shao, Linbo Zhang, Yuhao	2024
	Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Porter, Matthew A.Ma, Yunwei Qin, Yuan Srijanto, Bernadeta Briggs, Dayrl Kravchenko, Ivan Zhang, Yuhao	2024
	Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Journal:Advanced Electronic Materials	Ma, Yunwei Qin, Yuan Porter, Matthew Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Boyan Wang, Yifan Jacobs, Alan G.Wang, Han Tadjer, Marko Zhang, Yuhao	2023

Showing results 1 to 19 of 19