Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study Journal:IEEE Transactions on Electron Devices | 2022 | ||
Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO 2 Journal:Journal of Applied Physics | 2022 |