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- Publisher Website: 10.1109/TED.2022.3169122
- WOS: WOS:000791708400001
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Article: Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study
Title | Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study |
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Authors | |
Issue Date | 2022 |
Citation | IEEE Transactions on Electron Devices, 2022, v. 69, p. 3494-3498 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/322241 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Sang, P | - |
dc.contributor.author | Wang, Q | - |
dc.contributor.author | Wei, W | - |
dc.contributor.author | Li, Y | - |
dc.contributor.author | Li, C | - |
dc.contributor.author | Chen, J | - |
dc.date.accessioned | 2022-11-14T08:17:46Z | - |
dc.date.available | 2022-11-14T08:17:46Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2022, v. 69, p. 3494-3498 | - |
dc.identifier.uri | http://hdl.handle.net/10722/322241 | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.title | Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study | - |
dc.type | Article | - |
dc.identifier.email | Li, C: canl@hku.hk | - |
dc.identifier.authority | Li, C=rp02706 | - |
dc.identifier.doi | 10.1109/TED.2022.3169122 | - |
dc.identifier.hkuros | 341829 | - |
dc.identifier.volume | 69 | - |
dc.identifier.spage | 3494 | - |
dc.identifier.epage | 3498 | - |
dc.identifier.isi | WOS:000791708400001 | - |