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Showing results 1 to 10 of 10

	Title	Author(s)	Issue Date
	1 kV Self-Aligned Vertical GaN Superjunction Diode Journal:IEEE Electron Device Letters	Ma, Yunwei Porter, Matthew Qin, Yuan Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Yifan Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Udrea, Florin Tadjer, Marko Wang, Han Zhang, Yuhao	2024
	10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Porter, Matthew Ma, Yunwei Spencer, Joseph Du, Zhonghao Jacobs, Alan G.Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
	2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, Yuan Porter, Matthew Xiao, Ming Du, Zhonghao Zhang, Hongming Ma, Yunwei Spencer, Joseph Wang, Boyan Song, Qihao Sasaki, Kohei Lin, Chia Hung Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Tadjer, Marko Wang, Han Zhang, Yuhao	2023
	2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension Journal:IEEE Electron Device Letters	Wang, Boyan Xiao, Ming Spencer, Joseph Qin, Yuan Sasaki, Kohei Tadjer, Marko J.Zhang, Yuhao	2023
	First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
	(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga<inf>2</inf>O<inf>3</inf>Devices? Proceeding/Conference:ECS Transactions	Zhang, Yuhao Wang, Boyan Xiao, Ming Spencer, Joseph Zhang, Ruizhe Knoll, Jack Dimarino, Christina Lu, Guo Quan Sasaki, Kohei Buttay, Cyril	2021
	NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Xiao, Ming Wang, Boyan Zhang, Ruizhe Song, Qihao Spencer, Joseph Du, Zhonghao Qin, Yuan Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
	NiO junction termination extension for high-voltage (>3 kV) Ga<inf>2</inf>O<inf>3</inf> devices Journal:Applied Physics Letters	Xiao, Ming Wang, Boyan Spencer, Joseph Qin, Yuan Porter, Matthew Ma, Yunwei Wang, Yifan Sasaki, Kohei Tadjer, Marko Zhang, Yuhao	2023
	Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Journal:Journal of Physics D: Applied Physics	Qin, Yuan Albano, Benjamin Spencer, Joseph Lundh, James Spencer Wang, Boyan Buttay, Cyril Tadjer, Marko DiMarino, Christina Zhang, Yuhao	2023
	Wide-Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Journal:Advanced Electronic Materials	Ma, Yunwei Qin, Yuan Porter, Matthew Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Boyan Wang, Yifan Jacobs, Alan G.Wang, Han Tadjer, Marko Zhang, Yuhao	2023

Showing results 1 to 10 of 10