Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2017 | ||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 |