Showing results 1 to 6 of 6
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Barrier height change in very thin SiO2 films caused by charge injection Journal:Electrochemical and Solid-State Letters | 2002 | ||
Core-level shift of Si nanocrystals embedded in a SiO 2 matrix Journal:Journal of Physical Chemistry B | 2004 | ||
Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrix Journal:Journal of Nanoscience and Nanotechnology | 2007 | ||
Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface Journal:Journal of Applied Physics | 2004 | ||
Post-breakdown conduction instability of ultrathin SiO 2 films observed in ramped-current and ramped-voltage current-voltage measurements Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002 | ||
Snapback behaviour and its similarity to the switching behaviour in ultra-thin silicon dioxide films after hard breakdown Journal:Journal of Physics D: Applied Physics | 2001 |