Browsing by Author Wang, Boyan

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TitleAuthor(s)Issue Date
 
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier
Journal:IEEE Electron Device Letters
Qin, YuanXiao, MingZhang, RuizheXie, QingyunPalacios, TomasWang, BoyanMa, YunweiKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao
2023
 
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Qin, YuanPorter, MatthewXiao, MingDu, ZhonghaoZhang, HongmingMa, YunweiSpencer, JosephWang, BoyanSong, QihaoSasaki, KoheiLin, Chia HungKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Tadjer, MarkoWang, HanZhang, Yuhao
2023
 
2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension
Journal:IEEE Electron Device Letters
Wang, BoyanXiao, MingSpencer, JosephQin, YuanSasaki, KoheiTadjer, Marko J.Zhang, Yuhao
2023
 
Application of noise to avoid overfitting in TCAD augmented machine learning
Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Raju, Sophia SusanWang, BoyanMehta, KashyapXiao, MingZhang, YuhaoWong, Hiu Yung
2020
 
Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices
Journal:IEEE Transactions on Electron Devices
Wang, BoyanXiao, MingZhang, ZichenWang, YifanQin, YuanSong, QihaoLu, Guo QuanNgo, KhaiZhang, Yuhao
2023
 
Electro-Thermal Device-Package Co-Design for Ultra-Wide Bandgap Gallium Oxide Power Devices
Proceeding/Conference:2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Albano, BenjaminWang, BoyanZhang, YuhaoDiMarino, Christina
2022
 
Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications
Proceeding/Conference:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
Song, QihaoKozak, Joseph P.Xiao, MingMa, YunweiWang, BoyanZhang, RuizheVolkov, RomanSmith, KurtBaksht, TamaraZhang, Yuhao
2021
 
First Demonstration of Vertical Superjunction Diode in GaN
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Xiao, MingMa, YunweiDu, ZhonghaoQin, YuanLiu, KaiCheng, KaiUdrea, FlorinXie, AndyBeam, EdwardWang, BoyanSpencer, JosephTadjer, MarkoAnderson, TravisWang, HanZhang, Yuhao
2022
 
High-voltage vertical Ga<inf>2</inf>O<inf>3</inf> power rectifiers operational at high temperatures up to 600 K
Journal:Applied Physics Letters
Wang, BoyanXiao, MingYan, XiaodongWong, Hiu YungMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2019
 
Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design
Journal:IEEE Access
Mehta, KashyapRaju, Sophia SusanXiao, MingWang, BoyanZhang, YuhaoWong, Hiu Yung
2020
 
Investigation of deep defects and their effects on the properties of NiO/β-Ga<inf>2</inf>O<inf>3</inf> heterojuncion diodes
Journal:Materials Today Electronics
Almalki, AbdulazizMadani, LabedSengouga, NouredineAlhassan, SultanAlotaibi, SaudAlhassni, AmraAlmunyif, AmjadChauhan, Jasbinder S.Henini, MohamedGaleti, Helder Vinicius AvançoGobato, Yara Galvãode Godoy, Marcio Peron FrancoAndrade, Marcelo B.Souto, SérgioZhou, HongWang, BoyanXiao, MingQin, YuanZhang, Yuhao
2023
 
(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga<inf>2</inf>O<inf>3</inf>Devices?
Proceeding/Conference:ECS Transactions
Zhang, YuhaoWang, BoyanXiao, MingSpencer, JosephZhang, RuizheKnoll, JackDimarino, ChristinaLu, Guo QuanSasaki, KoheiButtay, Cyril
2021
 
Low Thermal Resistance (0.5 K/W) GaO Schottky Rectifiers with Double-Side Packaging
Journal:IEEE Electron Device Letters
Wang, BoyanXiao, MingKnoll, JackButtay, CyrilSasaki, KoheiLu, Guo QuanDimarino, ChristinaZhang, Yuhao
2021
 
NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Xiao, MingWang, BoyanZhang, RuizheSong, QihaoSpencer, JosephDu, ZhonghaoQin, YuanSasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
NiO junction termination extension for high-voltage (&gt;3 kV) Ga<inf>2</inf>O<inf>3</inf> devices
Journal:Applied Physics Letters
Xiao, MingWang, BoyanSpencer, JosephQin, YuanPorter, MatthewMa, YunweiWang, YifanSasaki, KoheiTadjer, MarkoZhang, Yuhao
2023
 
Packaged Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifiers with over 60-A Surge Current Capability
Journal:IEEE Transactions on Power Electronics
Xiao, MingWang, BoyanLiu, JingcunZhang, RuizheZhang, ZichenDing, ChaoLu, ShengchangSasaki, KoheiLu, Guo QuanButtay, CyrilZhang, Yuhao
2021
 
Packaging of a 10-kV Double-Side Cooled Silicon Carbide Diode Module With Thin Substrates Coated by a Nonlinear Resistive Polymer-Nanoparticle Composite
Journal:IEEE Transactions on Power Electronics
Zhang, ZichenLu, ShengchangWang, BoyanZhang, YuhaoYun, NickSung, WoongjeNgo, Khai D.T.Lu, Guo Quan
2022
 
Surge current capability of ultra-wide-bandgap Ga<inf>2</inf>O<inf>3</inf> Schottky diodes
Journal:Microelectronics Reliability
Buttay, CyrilWong, Hiu YungWang, BoyanXiao, MingDimarino, ChristinaZhang, Yuhao
2020
 
TCAD-Augmented Machine Learning with and without Domain Expertise
Journal:IEEE Transactions on Electron Devices
Dhillon, HarsaroopMehta, KashyapXiao, MingWang, BoyanZhang, YuhaoWong, Hiu Yung
2021
 
TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration
Journal:IEEE Journal of the Electron Devices Society
Wong, Hiu YungXiao, MingWang, BoyanChiu, Yan KaYan, XiaodongMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2020
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