Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | |
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Large-area few-layer MoS<inf>2</inf> deposited by sputtering Journal:Materials Research Express | 2016 | ||
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 |