Showing results 1 to 6 of 6
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Journal:IEEE Transactions on Electron Devices | 2024 | ||
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga<inf>2</inf>O<inf>3</inf> Heterojunction by Edge Termination Optimization Journal:IEEE Electron Device Letters | 2024 | ||
Ga<inf>2</inf>O<inf>3</inf>/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact Journal:Applied Physics Letters | 2024 | ||
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Journal:Applied Physics Letters | 6-Jan-2025 | ||
Robust Avalanche (1.5 kV, 2 kA/cm2) in Vertical GaN Diodes on Patterned Sapphire Substrate Journal:IEEE Electron Device Letters | 1-Jan-2025 | ||
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective Journal:Applied Physics Letters | 2024 |