High-k Gate Dielectrics for High-Performance Germanium MISFET's
Grant Data
Project Title
High-k Gate Dielectrics for High-Performance Germanium MISFET's
Principal Investigator
Professor Lai, Pui To
(Principal Investigator (PI))
Duration
27
Start Date
2008-09-01
Amount
367255
Conference Title
High-k Gate Dielectrics for High-Performance Germanium MISFET's
Presentation Title
Keywords
Dielectrics, Germanium MISFET's, High-k Gate
Discipline
Electronics
Panel
Engineering (E)
HKU Project Code
HKU 713308E
Grant Type
General Research Fund (GRF)
Funding Year
2008
Status
Completed
All Publications
| Title | Author(s) | Issue Date | |
|---|---|---|---|
| 2009 | |||
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications Journal:IEEE Transactions on Device and Materials Reliability | 2011 | ||
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters | 2011 | ||
| 2011 | |||
| 2010 | |||
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing | 2010 | ||
| 2010 | |||
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric Journal:Solid-State Electronics | 2010 | ||
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer Journal:Applied Physics A: Materials Science and Processing | 2010 | ||
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode Journal:Microelectronics Reliability | 2010 |