|
gan |
7 |
|
gallium nitride |
6 |
|
light-emitting diode |
6 |
|
color chromaticity |
5 |
|
emission bands |
5 |
|
gallium nitride (gan) |
5 |
|
laser micro-machining |
5 |
|
leds |
5 |
|
microdisplay |
5 |
|
monolithic integration |
5 |
|
photodetector |
5 |
|
1/f noise |
4 |
|
as-grown |
4 |
|
bendable waveguide |
4 |
|
fiber coupling |
4 |
|
lasers |
4 |
|
light emitting diodes |
4 |
|
light extraction |
4 |
|
light-emitting diode (led) |
4 |
|
light-emitting diodes |
4 |
|
light-emitting diodes (leds) |
4 |
|
light-emitting diodes(leds) |
4 |
|
micro-light-emitting diode |
4 |
|
monolithic |
4 |
|
nanolithography |
4 |
|
photonic integration |
4 |
|
arrays |
3 |
|
axial symmetry |
3 |
|
broadband emission |
3 |
|
circular disk |
3 |
|
circular geometry |
3 |
|
crystal qualities |
3 |
|
dc sputtering |
3 |
|
dielectric |
3 |
|
dielectric constants |
3 |
|
display |
3 |
|
emission beams |
3 |
|
emission pattern |
3 |
|
first order |
3 |
|
gallium compounds |
3 |
|
heterogeneous integration |
3 |
|
hflao |
3 |
|
hfo 2 |
3 |
|
high k |
3 |
|
high quality |
3 |
|
high κ |
3 |
|
high-κ |
3 |
|
i-v measurements |
3 |
|
iii-v semiconductor |
3 |
|
iii-v semiconductors |
3 |
|
ingan |
3 |
|
ingan/gan |
3 |
|
integration |
3 |
|
interconnect |
3 |
|
laser application |
3 |
|
laser micromachining |
3 |
|
led |
3 |
|
light transmission |
3 |
|
lighting |
3 |
|
micro-led |
3 |
|
nanosphere lithography |
3 |
|
organic thin-film transistor (otft) |
3 |
|
organic transistor |
3 |
|
otft |
3 |
|
photo-electro-thermal theory |
3 |
|
photodetector (pd) |
3 |
|
power loss |
3 |
|
quantum wells |
3 |
|
rough surface |
3 |
|
scalar-wave modeling (swm) |
3 |
|
spectral stochastic collocation |
3 |
|
thin films |
3 |
|
thin-film |
3 |
|
ablation process |
2 |
|
ablation thresholds |
2 |
|
air-gaps |
2 |
|
alternating current |
2 |
|
ambient medium |
2 |
|
band gaps |
2 |
|
bandgap engineering |
2 |
|
bipolar junction transistor |
2 |
|
blue leds |
2 |
|
bottom surfaces |
2 |
|
bow-tie-shaped dimers |
2 |
|
cavitation bubble |
2 |
|
cie coordinates |
2 |
|
closed-packed arrays |
2 |
|
color |
2 |
|
color uniformity |
2 |
|
composite micromechanics |
2 |
|
computer-aided design |
2 |
|
confocal microscopy |
2 |
|
conic sections |
2 |
|
convergent beams |
2 |
|
current voltage |
2 |
|
damage-free |
2 |
|
decay life-time |
2 |
|
defect concentrations |
2 |
|
degradation mechanism |
2 |
|
design |
2 |
|
device isolation |
2 |
|
device lifetime |
2 |
|
device performance |
2 |
|
direct-write |
2 |
|
dislocations |
2 |
|
dry-etch |
2 |
|
e-field |
2 |
|
electric rectifiers |
2 |
|
electrical characteristic |
2 |
|
electrical properties |
2 |
|
electronics and devices |
2 |
|
emission characteristics |
2 |
|
emission wavelength |
2 |
|
equilibrium positions |
2 |
|
equipment design |
2 |
|
equipment failure analysis |
2 |
|
etch damage |
2 |
|
etch mask |
2 |
|
etch process |
2 |
|
etching |
2 |
|
finite difference time domain simulations |
2 |
|
flexible |
2 |
|
fluences |
2 |
|
focusing optics |
2 |
|
gaas |
2 |
|
gaas metal-oxide-semiconductor (mos) |
2 |
|
gaas mos |
2 |
|
gallium - chemistry |
2 |
|
gan light-emitting diodes |
2 |
|
gan on si microdisks |
2 |
|
gan-based microcavities |
2 |
|
gate |
2 |
|
gratings |
2 |
|
hard material |
2 |
|
hflaon passivation layer |
2 |
|
high quality factors |
2 |
|
high temperature |
2 |
|
high-k dielectrics |
2 |
|
horizontal machining |
2 |
|
hydrogen sensor |
2 |
|
hydrogen-sensing property |
2 |
|
iii nitride |
2 |
|
iii-nitride |
2 |
|
iii-nitride semiconductors |
2 |
|
indium tin oxide |
2 |
|
ingan/gan multi-quantum well |
2 |
|
interface state density |
2 |
|
interface states |
2 |
|
interface states density |
2 |
|
interfacial passivation layer (ipl) |
2 |
|
internal reflectors |
2 |
|
laalon |
2 |
|
laser lift-off |
2 |
|
laser-induced damage |
2 |
|
led arrays |
2 |
|
light emitting diode |
2 |
|
light-extraction efficiency |
2 |
|
lighting - instrumentation |
2 |
|
lighting applications |
2 |
|
liquid immersion |
2 |
|
localized surface plasmon |
2 |
|
luminous efficacy |
2 |
|
luminous flux |
2 |
|
machining methods |
2 |
|
metallic nanoparticles |
2 |
|
metals - chemistry |
2 |
|
metal–oxide–semiconductor structures |
2 |
|
metal−oxide−semiconductor capacitors |
2 |
|
micro-lens |
2 |
|
micro-light emitting diode (micro-led) |
2 |
|
microdisk laser |
2 |
|
microdisk lasers |
2 |
|
micromachining |
2 |
|
molecular dynamics |
2 |
|
multiple quantum wells |
2 |
|
nano sphere lithography |
2 |
|
nanopillars |
2 |
|
nanoscale pattern formation |
2 |
|
nanoscale science and low-d systems |
2 |
|
nanosecond ultraviolet laser |
2 |
|
nanosphere |
2 |
|
nanostructures |
2 |
|
nanostructures - chemistry |
2 |
|
nanotechnology |
2 |
|
nanotechnology - methods |
2 |
|
nd-based high-k |
2 |
|
near-field microscopy |
2 |
|
numerical predictions |
2 |
|
opal films |
2 |
|
optical crosstalk |
2 |
|
optical devices |
2 |
|
optical micro-resonators |
2 |
|
optical transmission property |
2 |
|
optics, quantum optics and lasers |
2 |
|
passivation |
2 |
|
performance |
2 |
|
photonic bandgap |
2 |
|
photonic crystal |
2 |
|
physics engineering |
2 |
|
poggio-miller-chang-harrington-wu-tsai |
2 |
|
polarizabilities |
2 |
|
polarization |
2 |
|
polarization behavior |
2 |
|
polarized emissions |
2 |
|
q-factor |
2 |
|
quantum well |
2 |
|
raman enhancement |
2 |
|
relative intensity |
2 |
|
reliability |
2 |
|
reproducibility of results |
2 |
|
sapphire |
2 |
|
self-assembled |
2 |
|
semiconductors |
2 |
|
sensitivity and specificity |
2 |
|
silicon |
2 |
|
spatial pattern formation |
2 |
|
strain engineering |
2 |
|
strain-relaxation effects |
2 |
|
surfaces, interfaces and thin films |
2 |
|
taon |
2 |
|
thin film |
2 |
|
tunable emissions |
2 |
|
vertical stacking |
2 |
|
vertically mounted |
2 |
|
viewing angle |
2 |
|
voltage supply |
2 |
|
whispering gallery modes |
2 |
|
whispering-gallery modes |
2 |
|
white color |
2 |
|
white light emission |
2 |
|
white light emitting diodes |
2 |
|
white light-emitting diode (led) |
2 |
|
yttrium |
2 |
|
a1. etching |
1 |
|
b1. nitrides |
1 |
|
b3. light emitting diodes |
1 |
|
b3. microdisplays |
1 |
|
chip-stacking |
1 |
|
coffee-ring effect |
1 |
|
color tuning |
1 |
|
color-tuning |
1 |
|
dielectric mirrors |
1 |
|
directional coupler |
1 |
|
dispersion force |
1 |
|
excitation density |
1 |
|
extraction efficiency |
1 |
|
gan leds |
1 |
|
gan-on-silicon platform |
1 |
|
heterogeneously integrated circuits |
1 |
|
in-plane visible light communication |
1 |
|
in-situ |
1 |
|
ingan/gan multiple-quantumwell diode |
1 |
|
inkjet printing |
1 |
|
jet-printing |
1 |
|
laser ablation |
1 |
|
laser-micromachining |
1 |
|
lasing action |
1 |
|
led devices |
1 |
|
light-emitting diode (led) arrays |
1 |
|
micro-display |
1 |
|
micro-led arrays |
1 |
|
micro-leds |
1 |
|
micro-lens arrays |
1 |
|
micro-light-emitting diodes |
1 |
|
microdisplays |
1 |
|
microlight-emitting diode |
1 |
|
microlight-emitting diodes (micro-leds) |
1 |
|
microring |
1 |
|
nano-cones |
1 |
|
nanospheres |
1 |
|
natural and synthetic diamonds |
1 |
|
near-field spectroscopy |
1 |
|
on-chip optical interconnect |
1 |
|
optical properties |
1 |
|
optics |
1 |
|
organic thin-film transistor |
1 |
|
phosphor-free |
1 |
|
photodiodes (pds) |
1 |
|
physics |
1 |
|
self-assembly |
1 |
|
strain-relaxation |
1 |
|
surface characterization |
1 |
|
surface energy |
1 |
