physics engineering |
15 |
mbe |
10 |
physics |
10 |
photoluminescence |
8 |
doping |
7 |
stm |
7 |
gan |
6 |
heterojunction |
6 |
oled |
6 |
titanium dioxide |
6 |
tris-(8-hydroxyquinoline) aluminium |
6 |
b1. nanomaterials |
5 |
b1. oxides |
5 |
b1. zinc compounds |
5 |
carbon material devices |
5 |
dft |
5 |
gold materials |
5 |
molecular beam epitaxy |
5 |
nanostructures |
5 |
nanowire |
5 |
photovoltaic cells |
5 |
polymers |
5 |
single-crystal |
5 |
titanium |
5 |
tmd |
5 |
topological insulator |
5 |
wafer-scale |
5 |
zinc oxide |
5 |
2d materials |
4 |
a1. nanomaterials |
4 |
a1. nanostructures |
4 |
atomic force microscopy |
4 |
b2. semiconducting ii-vi materials |
4 |
bi 2se 3 film |
4 |
block copolymers |
4 |
electrochemical performance |
4 |
epitaxy |
4 |
gold |
4 |
hybrid solar cells |
4 |
layered double hydroxide |
4 |
lead removal |
4 |
low temperature |
4 |
magnesium leaching |
4 |
magnetoresistance |
4 |
materials characterization |
4 |
membrane |
4 |
metal oxides |
4 |
nano-composite |
4 |
nano-composites |
4 |
optics |
4 |
organic solar cells |
4 |
phase contrast |
4 |
porosity |
4 |
positron beams |
4 |
scanning electron microscopy |
4 |
scanning transmission electron microscopy |
4 |
scanning tunneling microscopy |
4 |
sic |
4 |
silver vanadium oxides |
4 |
sol–gel method |
4 |
spinel ferrite |
4 |
tem |
4 |
transition metal dichalcogenides |
4 |
transport property |
4 |
ultraviolet radiation |
4 |
van der waals epitaxy |
4 |
zno |
4 |
1d metal |
3 |
a. nanostructures |
3 |
a. oxides |
3 |
a3. molecular beam epitaxy |
3 |
anode |
3 |
atomic force microscopy (afm) |
3 |
b1. zno |
3 |
band bending |
3 |
blue phosphorene |
3 |
cross-sectional stem |
3 |
diblock copolymers |
3 |
dopant-free |
3 |
epifilms |
3 |
etching |
3 |
exciton theory |
3 |
film thickness |
3 |
friedel oscillation |
3 |
gallium nitride |
3 |
graphene oxide |
3 |
hole transport materials |
3 |
hollow spheres |
3 |
inorganic nanostructures |
3 |
interferometric autocorrelation |
3 |
light absorption |
3 |
lithium ion batteries |
3 |
lithium ion battery |
3 |
lithium ion battteries |
3 |
lithium-ion battery |
3 |
luminescence |
3 |
mapbi 3 solar cells |
3 |
mass spectrometry |
3 |
metal oxide nanostructures |
3 |
metal-phosphorus network |
3 |
metal-phosphorus networks |
3 |
mirror twin boundaries |
3 |
mirror twin grain boundary |
3 |
mirror twin-domain boundary |
3 |
mirror-twin domain boundaries |
3 |
mn2o3 |
3 |
mobility |
3 |
molecular orientation |
3 |
morphology |
3 |
morphology evolution |
3 |
mos -au interaction 2 |
3 |
mose 2 |
3 |
multiphoton absorption (mpa) |
3 |
nanoporous |
3 |
nanostructure materials |
3 |
nanowires |
3 |
niobium |
3 |
niobium doping |
3 |
one-dimensional system |
3 |
organic nanostructures |
3 |
p(s-b-mma) |
3 |
phase separation |
3 |
phosphorus |
3 |
photons |
3 |
polymorphism |
3 |
porous cubes |
3 |
porous structures |
3 |
quantum electronics |
3 |
quantum well states |
3 |
room temperature |
3 |
scanning tunneling spectroscopy |
3 |
second-harmonic generation (shg) |
3 |
semiconductor doping |
3 |
silicon |
3 |
spectroscopy |
3 |
stem |
3 |
step-guided epitaxy |
3 |
superconductors |
3 |
surface treatment |
3 |
tailorable |
3 |
three-photon absorption |
3 |
tio2(b), solution treatment, tio2 composite |
3 |
tmd monolayer |
3 |
tomonaga−luttinger liquid |
3 |
topological insulators |
3 |
transition metal dichalcogenide |
3 |
transition metal dichalcogenide monolayers |
3 |
transition-metal chalcogenides |
3 |
two-dimensional |
3 |
two-dimensional materials |
3 |
unidirectional domain alignment |
3 |
x-rays -- diffraction |
3 |
zinc oxide (zno) |
3 |
znmn2o4 |
3 |
2d crystal |
2 |
a1. sem |
2 |
a1. substrates |
2 |
a1. surface processes |
2 |
a1. suspended ga2se3 film |
2 |
a1. xrd |
2 |
a3. molecular-beam epitaxy |
2 |
a3. thermal evaporation |
2 |
adlayer |
2 |
alloying |
2 |
amorphous |
2 |
amorphous regions |
2 |
as-grown |
2 |
astrochemistry |
2 |
b1. bismuth compounds |
2 |
b1. nitrides |
2 |
b1. potassium tungstate |
2 |
b1. topological insulator |
2 |
b2. bi2se3 |
2 |
b2. ga2se3 |
2 |
b2. semiconducting gallium compounds |
2 |
b2. topological insulator |
2 |
band alignment |
2 |
catalysis |
2 |
co thin films |
2 |
computer networks |
2 |
condensed matter physics |
2 |
cr |
2 |
crystal growth |
2 |
crystal structure |
2 |
crystalline silicate |
2 |
curie temperature |
2 |
defect formation |
2 |
deposition rates |
2 |
electron microscopes |
2 |
electron microscopy |
2 |
electron optics |
2 |
energy bandgaps |
2 |
exciton |
2 |
ferromagnetism |
2 |
first-principles |
2 |
ga |
2 |
gallium fluxes |
2 |
gamnn |
2 |
gan/zno |
2 |
growth (materials) |
2 |
growth characteristic |
2 |
growth front |
2 |
growth modes |
2 |
growth of thin films |
2 |
growth parameters |
2 |
hetero interfaces |
2 |
hetero-interfaces |
2 |
heteroepitaxial |
2 |
high energy electron diffraction |
2 |
ingan |
2 |
insulating polymers |
2 |
interface |
2 |
interface formation |
2 |
lattice constants |
2 |
led |
2 |
low-energy electron diffraction |
2 |
mbe,stm/s |
2 |
methanol |
2 |
mn |
2 |
mn-doped |
2 |
morphological properties |
2 |
mote2 monolayer |
2 |
nanomaterials |
2 |
ni |
2 |
normal band |
2 |
nucleation |
2 |
phase transition |
2 |
physics engineering chemistry |
2 |
piezoelectric field |
2 |
polarity |
2 |
positive ions |
2 |
quantum confined stark effect |
2 |
quantum effects |
2 |
quantum size effects |
2 |
quantum well |
2 |
relaxation rates |
2 |
segregation |
2 |
semiconductors |
2 |
siox |
2 |
source fluxes |
2 |
stm/sts |
2 |
surface reconstructions |
2 |
thermal doping |
2 |
tmds |
2 |
total energy calculation |
2 |
wse2 |
2 |
wurtzite |
2 |
6h-sic(0001) |
1 |
a-carbon |
1 |
ab initio |
1 |
ab initio calculations |
1 |
adsorption/desorption kinetics |
1 |
aluminium compounds |
1 |
amorphous-like |
1 |
anisotropy |
1 |
atomic and molecular physics |
1 |
atomic structure |
1 |
bi2se3 |
1 |
c atoms |
1 |
contact angle methodology |
1 |
contact angles on hydrophobic surfaces |
1 |
crystallinities |
1 |
defects |
1 |
density-functional study |
1 |
dislocation structure |
1 |
domain boundary |
1 |
dynamics |
1 |
edge state |
1 |
effective coupling |
1 |
electronic and magnetic properties |
1 |
equation of state for interfacial tensions |
1 |
first-principle study |
1 |
first-principles study |
1 |
gan film |
1 |
gap opening |
1 |
gas source molecular beam epitaxy (gsmbe) |
1 |
ge atom |
1 |
graphene nanoribbons |
1 |
graphene sheets |
1 |
growth conditions |
1 |
heterostructure |
1 |
high magnetic fields |
1 |
high-field |
1 |
high-index bi2se3 |
1 |
high-index surfaces |
1 |
iii-nitride |
1 |
iii-v semiconductors |
1 |
indium |
1 |
indium compounds |
1 |
inn |
1 |
inn/gan(111) |
1 |
inversion domain boundaries |
1 |
kinetics |
1 |
leed |
1 |
misfit dislocations |
1 |
molecular beams |
1 |
molecular-beam epitaxy |
1 |
monolayers |
1 |
monte carlo simulations |
1 |
mose2 |
1 |
mose2 bilayer |
1 |
nanoclusters |
1 |
negative magneto-resistance |
1 |
orbital electrons |
1 |
oxygen adsorption |
1 |
point defects |
1 |
quantum theory |
1 |
quantum wires |
1 |
reconstruction |
1 |
si/sige |
1 |
size and shape |
1 |
spin-polarized |
1 |
stacking orders |
1 |
step |
1 |
step formation and bunching |
1 |
stm/s |
1 |
strain |
1 |
superlattices |
1 |
surface |
1 |
surface defects |
1 |
surface diffusion |
1 |
surface nucleation |
1 |
surface reconstruction |
1 |
surface segregation |
1 |
surface state |
1 |
surface structure, morphology, roughness, and topography |
1 |
surface termination |
1 |
transport dimensionality |
1 |
twin domain |
1 |
van der waals heterojunctions |
1 |
vapour adsorption on hydrophobic surfaces |
1 |
weak-antilocalization |
1 |
weak-localization |
1 |