|
physics engineering |
13 |
|
photoluminescence |
12 |
|
luminescence |
8 |
|
zno |
8 |
|
defects |
7 |
|
gan epilayers |
7 |
|
nanostructures |
7 |
|
metal-metal interactions |
6 |
|
platinum |
6 |
|
radiative recombination |
6 |
|
semiconductors |
6 |
|
6h-sic |
5 |
|
band edge |
5 |
|
color‐tunable |
5 |
|
dlts |
5 |
|
electroluminescence |
5 |
|
electron-phonon coupling |
5 |
|
gallium nitride |
5 |
|
nanorod |
5 |
|
organic light‐emitting diodes |
5 |
|
pas |
5 |
|
pl |
5 |
|
raman scattering |
5 |
|
schottky contact |
5 |
|
single emitters |
5 |
|
tetradentate pt(ii) complexes |
5 |
|
xps |
5 |
|
crystal growth |
4 |
|
emission bands |
4 |
|
excitation light |
4 |
|
gaas |
4 |
|
gan |
4 |
|
high quality |
4 |
|
ii-vi semiconductors |
4 |
|
non-linear optical properties |
4 |
|
physics |
4 |
|
polarization dependence |
4 |
|
rocking curves |
4 |
|
semiconductor |
4 |
|
ws2 monolayer |
4 |
|
a. silicon carbide |
3 |
|
as-grown |
3 |
|
beryllium |
3 |
|
bias voltage |
3 |
|
broadband emission |
3 |
|
c. be implantation |
3 |
|
c. beryllium acceptors |
3 |
|
capacitance |
3 |
|
carrier loss mechanism |
3 |
|
chemical vapour deposition |
3 |
|
colorful emissions |
3 |
|
compressive strain |
3 |
|
crystal qualities |
3 |
|
diffusion |
3 |
|
diffusion transport |
3 |
|
doping concentration |
3 |
|
electroluminescence image surveying |
3 |
|
energy regions |
3 |
|
epilayers |
3 |
|
epilayers grown |
3 |
|
first order |
3 |
|
free excitons |
3 |
|
ga in p/gaas double-junction tandem solar cell x 1-x |
3 |
|
gainp alloy |
3 |
|
gainp/gaas double-junction tandem solar cells |
3 |
|
gaxin1-xp/gaas double-junction tandem solar cell |
3 |
|
gold |
3 |
|
implantation |
3 |
|
interferometric autocorrelation |
3 |
|
ion implantation |
3 |
|
irradiation |
3 |
|
light absorption |
3 |
|
light hole exciton |
3 |
|
localization mechanism |
3 |
|
low temperature photoluminescence |
3 |
|
ltpl |
3 |
|
luminescence lifetime |
3 |
|
minority carriers |
3 |
|
multiphoton absorption (mpa) |
3 |
|
neutron irradiation |
3 |
|
off-resonance |
3 |
|
optical harmonic generation |
3 |
|
peak position |
3 |
|
photocurrent |
3 |
|
photons |
3 |
|
r-sapphire |
3 |
|
raman spectra |
3 |
|
rods (structures) |
3 |
|
room temperature |
3 |
|
schottky barrier |
3 |
|
schottky contacts |
3 |
|
second-harmonic generation (shg) |
3 |
|
solar cell |
3 |
|
strain |
3 |
|
sub-bandgap |
3 |
|
three-photon absorption |
3 |
|
yellow luminescence |
3 |
|
zinc oxide (zno) |
3 |
|
2d material |
2 |
|
a1. surface processes |
2 |
|
a3. molecular beam epitaxy |
2 |
|
all-inorganic halide perovskites |
2 |
|
b1. nitrides |
2 |
|
b2. semiconducting gallium compounds |
2 |
|
benzene solution |
2 |
|
binding energy |
2 |
|
branched alkynyls |
2 |
|
brownian oscillators |
2 |
|
bulk single crystals |
2 |
|
cadmium |
2 |
|
carrier migration |
2 |
|
carrier recombination |
2 |
|
charge transfer rates |
2 |
|
confocal micro-raman |
2 |
|
coupling region |
2 |
|
damping parameters |
2 |
|
deep red luminescence |
2 |
|
defect |
2 |
|
electron phonon couplings |
2 |
|
electron spin |
2 |
|
electron spins |
2 |
|
electron-phonon interactions |
2 |
|
electronic band structure |
2 |
|
electronic levels |
2 |
|
excitation lasers |
2 |
|
excitation sources |
2 |
|
excitation wavelength |
2 |
|
excited-state splitting |
2 |
|
exciton dissociation |
2 |
|
exciton emission |
2 |
|
exciton transition energy |
2 |
|
exciton-phonon coupling |
2 |
|
excitonic luminescence |
2 |
|
excitonic polaritons |
2 |
|
excitons |
2 |
|
femtoseconds |
2 |
|
gallium oxide |
2 |
|
heat transfer |
2 |
|
impurity-lattice coupling |
2 |
|
inas/gaas |
2 |
|
inas/gaas quantum dots |
2 |
|
ingan |
2 |
|
ingan/gan |
2 |
|
jahn-teller effect |
2 |
|
laser beam energy |
2 |
|
local thermal field |
2 |
|
localized-state ensemble |
2 |
|
magnetite |
2 |
|
microcrystal |
2 |
|
mn4+ ion |
2 |
|
molecular vibrations |
2 |
|
monolayer ws2 |
2 |
|
nanoparticles |
2 |
|
nanopillar |
2 |
|
nanopillars |
2 |
|
nanosheets |
2 |
|
nanotetrapods |
2 |
|
nanowires |
2 |
|
near infrared femtosecond laser |
2 |
|
near-infrared lasers |
2 |
|
negative thermal quenching |
2 |
|
nitridation |
2 |
|
nitriding |
2 |
|
non-linear optical characteristics |
2 |
|
optical kerr effect |
2 |
|
optical properties |
2 |
|
optics |
2 |
|
oxide phosphor |
2 |
|
phonon mode |
2 |
|
phonon-assisted luminescence |
2 |
|
phonons |
2 |
|
photochemistry |
2 |
|
photoluminescence excitation spectrum |
2 |
|
photoluminescence spectroscopy |
2 |
|
physical chemistry |
2 |
|
physics chemistry |
2 |
|
physics chemistry - physical chemistry |
2 |
|
piezoelectric field |
2 |
|
quantum confined stark effect |
2 |
|
quantum disks |
2 |
|
quantum well |
2 |
|
raman spectroscopy |
2 |
|
re-absorption |
2 |
|
self-absorption |
2 |
|
sem |
2 |
|
silicon carbide |
2 |
|
splitting of excited-state |
2 |
|
surface and interface states |
2 |
|
thin film |
2 |
|
tungsten sulfide |
2 |
|
two-photon absorption |
2 |
|
two-photon excitation |
2 |
|
vdwhs |
2 |
|
zno nanorods |
2 |
|
zno single crystal |
2 |
|
03.65.-w |
1 |
|
71.10.+x |
1 |
|
73.20.dx |
1 |
|
a. gaassb/algaas strained quantum well |
1 |
|
a. heterojunctions |
1 |
|
a. semiconductor |
1 |
|
a. semiconductors |
1 |
|
alingan |
1 |
|
b. molecular beam epitaxy |
1 |
|
blue shift |
1 |
|
borate fluorescent glass |
1 |
|
bromine compounds |
1 |
|
c. band structure |
1 |
|
carrier localization |
1 |
|
ce3+ ion-activated luag transparent ceramics |
1 |
|
cesium compounds |
1 |
|
crystal impurities |
1 |
|
crystal structure |
1 |
|
crystals |
1 |
|
d. electron-phonon interactions |
1 |
|
d. optical properties |
1 |
|
d. phonons |
1 |
|
d. photoluminescence |
1 |
|
diamond |
1 |
|
dilute bismides |
1 |
|
dislocations |
1 |
|
dominant phonon energy |
1 |
|
donor-bound exciton |
1 |
|
dot system |
1 |
|
e. luminescence |
1 |
|
effective mass |
1 |
|
electrochemical |
1 |
|
electrode |
1 |
|
electroluminescence (el) |
1 |
|
electron correlations |
1 |
|
emission intensity |
1 |
|
emission peaks |
1 |
|
energy |
1 |
|
energy gap |
1 |
|
energy transfer |
1 |
|
excitation energy |
1 |
|
excited states |
1 |
|
exciton |
1 |
|
exciton effect |
1 |
|
exciton linewidth |
1 |
|
exciton-phonon interaction |
1 |
|
exciton-phonon interactions |
1 |
|
external pressures |
1 |
|
fano resonance |
1 |
|
flux method |
1 |
|
gaas heterostructures |
1 |
|
gaas/alas |
1 |
|
gainp |
1 |
|
gainp2 alloy |
1 |
|
gallium compounds |
1 |
|
green phosphors |
1 |
|
green's function methods |
1 |
|
ground state transition |
1 |
|
high efficiency |
1 |
|
high resolution transmission electron microscopy |
1 |
|
hole concentration |
1 |
|
impedance spectroscopy |
1 |
|
indium arsenide |
1 |
|
inpbi |
1 |
|
interfaces (materials) |
1 |
|
ion-phonon coupling |
1 |
|
ionically thermal excitation |
1 |
|
landau level |
1 |
|
laser cooling |
1 |
|
lattice |
1 |
|
lead compounds |
1 |
|
light-emitting diodes (leds) |
1 |
|
luminescence spectrum |
1 |
|
magnetic/electronic dipole transitions |
1 |
|
magnetron sputtering |
1 |
|
metals |
1 |
|
minority carrier |
1 |
|
mn4+ luminescence |
1 |
|
molecular beam epitaxy |
1 |
|
mos devices |
1 |
|
multiple quantum wells (qws) |
1 |
|
nanocrystals |
1 |
|
new dispersion |
1 |
|
nitrides |
1 |
|
non-polar plane gan |
1 |
|
optical materials |
1 |
|
optical spectroscopy |
1 |
|
optical thermal behaviors |
1 |
|
oscillator strength |
1 |
|
oxide material |
1 |
|
oxide semiconductor |
1 |
|
pc-wleds |
1 |
|
phonon |
1 |
|
photolumi-nescence |
1 |
|
photoluminescent materials/devices |
1 |
|
photon recycling |
1 |
|
polarized photoluminescence |
1 |
|
potassium hydroxide |
1 |
|
quantum efficiency |
1 |
|
quantum process |
1 |
|
quantum wells |
1 |
|
rbli7si2o8:eu2+ |
1 |
|
refractive index |
1 |
|
ruby |
1 |
|
self-focusing |
1 |
|
self-refocusing |
1 |
|
self-trapped excitons |
1 |
|
semiconducting gallium arsenide |
1 |
|
semiconductor heterojunctions |
1 |
|
semiconductor lasers |
1 |
|
semiconductor measurements |
1 |
|
spontaneous atomic ordering |
1 |
|
superlattices |
1 |
|
temperature behavior |
1 |
|
temperature effect |
1 |
|
textile |
1 |
|
thermal effect |
1 |
|
time-resolved luminescence |
1 |
|
time-resolved photocurrent |
1 |
|
time-resolved photoluminescence |
1 |
|
transport |
1 |
|
trivalent cr ion-activated transparent ceramic |
1 |
|
tunnelling |
1 |
|
two-photon luminescence |
1 |
|
ultraviolet photodetectors |
1 |
|
ultrawide bandgap semiconductors |
1 |
|
variable-period oscillations |
1 |
|
vibronic coupling |
1 |
|
weak electron-phonon coupling |
1 |
|
wetting |
1 |
|
wide gap polar semiconductors |
1 |
|
zinc oxide single crystals |
1 |
|
zno rod |
1 |
|
发光 |
1 |
|
固体光学性质 |
1 |
|
声子-电子互作用 |
1 |
|
黄-里斯因子 |
1 |
