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Conference Paper: Circuit-level comparison of STATCOM technologies

TitleCircuit-level comparison of STATCOM technologies
Authors
KeywordsFACTS
GTO
H-Bridge
Multi-level inverter
STATCOM
SVC
Issue Date2003
PublisherIEEE
Citation
Pesc Record - Ieee Annual Power Electronics Specialists Conference, 2003, v. 4, p. 1777-1784 How to Cite?
AbstractThis paper performs a circuit-level evaluation of four modern STATCOM systems, namely True-48-Pulse and Quasi-48-Pulse STATCOMs, Cascade Multilevel and Binary Multilevel Inverters. The comparison is based on a number of factors including circuit topology, harmonic distortion, system losses, GTO quantities, their specific applications and other considerations. The theoretical results are verified by simulation with the use of MATLAB-Simulink Power System Blockset.
Persistent Identifierhttp://hdl.handle.net/10722/137008
ISSN
2019 SCImago Journal Rankings: 0.125
References

 

DC FieldValueLanguage
dc.contributor.authorLee, CKen_HK
dc.contributor.authorLeung, JSKen_HK
dc.contributor.authorHui, SYRen_HK
dc.contributor.authorChung, HSHen_HK
dc.date.accessioned2011-07-29T02:14:06Z-
dc.date.available2011-07-29T02:14:06Z-
dc.date.issued2003en_HK
dc.identifier.citationPesc Record - Ieee Annual Power Electronics Specialists Conference, 2003, v. 4, p. 1777-1784en_HK
dc.identifier.issn0275-9306en_HK
dc.identifier.urihttp://hdl.handle.net/10722/137008-
dc.description.abstractThis paper performs a circuit-level evaluation of four modern STATCOM systems, namely True-48-Pulse and Quasi-48-Pulse STATCOMs, Cascade Multilevel and Binary Multilevel Inverters. The comparison is based on a number of factors including circuit topology, harmonic distortion, system losses, GTO quantities, their specific applications and other considerations. The theoretical results are verified by simulation with the use of MATLAB-Simulink Power System Blockset.en_HK
dc.languageengen_US
dc.publisherIEEEen_US
dc.relation.ispartofPESC Record - IEEE Annual Power Electronics Specialists Conferenceen_HK
dc.subjectFACTSen_HK
dc.subjectGTOen_HK
dc.subjectH-Bridgeen_HK
dc.subjectMulti-level inverteren_HK
dc.subjectSTATCOMen_HK
dc.subjectSVCen_HK
dc.titleCircuit-level comparison of STATCOM technologiesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLee, CK:cklee@eee.hku.hken_HK
dc.identifier.emailHui, SYR:ronhui@eee.hku.hken_HK
dc.identifier.authorityLee, CK=rp01580en_HK
dc.identifier.authorityHui, SYR=rp01510en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0041654974en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041654974&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume4en_HK
dc.identifier.spage1777en_HK
dc.identifier.epage1784en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLee, CK=24537405500en_HK
dc.identifier.scopusauthoridLeung, JSK=7202180250en_HK
dc.identifier.scopusauthoridHui, SYR=7202831744en_HK
dc.identifier.scopusauthoridChung, HSH=7404007467en_HK
dc.identifier.issnl0275-9306-

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