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Article: LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
| Title | LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications |
|---|---|
| Authors | |
| Keywords | Physics Condensed Matter Optical and Electronic Materials Nanotechnology Characterization and Evaluation Materials Surfaces and Interfaces and Thin Films Operating Procedures and Materials Treatment |
| Issue Date | 2012 |
| Publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm |
| Citation | Applied Physics A: Materials Science And Processing, 2012, v. 108 n. 1, p. 229-234 How to Cite? |
| Abstract | Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al 2O 3/LaTiON-LaON/SiO 2/Si (band-engineered MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. The band profile of this band-engineered MONOS device was characterized by investigating the current-conduction mechanism. By adopting stacked LaTiON/LaON film instead of LaON film as charge-trapping layer, improved electrical properties can be achieved in terms of larger memory window (5.4 V at ±10-V sweeping voltage), higher program speed with lower operating gate voltage (2.1 V at 100-μs +6 V), and smaller charge loss rate at 125 °C, mainly due to the variable tunneling path of charge carriers under program/erase and retention modes (realized by the band-engineered charge-trapping layer), high trap density of LaTiON, and large barrier height at LaTiON/SiO 2 (2.3 eV). © 2012 The Author(s). |
| Persistent Identifier | http://hdl.handle.net/10722/147131 |
| ISSN | 2023 Impact Factor: 2.5 2023 SCImago Journal Rankings: 0.446 |
| ISI Accession Number ID | |
| References | H.J. Kim, S.Y. Cha, D.J. Choi, Mater. Sci. Semicond. Process. 13, 9 (2010) doi: 10.1016/j.mssp.2010.01.002 J.C. Wang, C.T. Lin, J. Appl. Phys. 109, 064506 (2011) J. Kwo, M. Hong, A.R. Kortan, K.L. Queeney, Y.J. Chabal, R.L. Opila, D.A. Muller, S.N.G. Chu, B.J. Sapjeta, T.S. Lay, J.P. Mannaerts, T. Boone, H.W. Krautter, J.J. Krajewski, A.M. Sergnt, J.M. Rosamilia, J. Appl. Phys. 89, 3920 (2001) T.M. Pan, T.Y. Yu, Semicond. Sci. Technol. 24, 095022 (2009) J. Robertson, Rep. Prog. Phys. 69, 327 (2006) Y.H. Wu, L.L. Chen, Y.S. Lin, M.Y. Li, H.C. Wu, IEEE Electron Device Lett. 30, 1290 (2009) H.J. Yang, C.F. Cheng, W.B. Chen, S.H. Lin, F.S. Yeh, S.P. McAlister, A. Chin, IEEE Trans. Electron Devices 55, 1417 (2008) J.Y. Wu, Y.T. Chen, M.H. Lin, T.B. Wu, IEEE Electron Device Lett. 31, 993 (2010) G. Zhang, C.H. Ra, H.M. Li, T.Z. Shen, B.K. Cheong, W.J. Yoo, IEEE Trans. Electron Devices 57, 2794 (2010) G. Dutta, K.P.S.S. Hembram, G.M. Rao, U.V. Waghmare, J. Appl. Phys. 103, 016102 (2008) D.M. Ramo, A.L. Shluger, G. Bersuker, Phys. Rev. B 79, 035306 (2009) F.Y. Tian, D. Yang, R.L. Opila, A.V. Teplyakov, Appl. Surf. Sci. 258, 3019 (2012) X.P. Wang, M.F. Li, A. Chin, C.X. Zhu, J. Shao, W. Lu, X.C. Shen, X.F. Yu, R. Chi, C. Shen, A.C.H. Huan, J.S. Pan, A.Y. Du, P. Lo, D.S.H. Chan, D.L. Kwong, Solid-State Electron. 50, 986 (2006) Y. Kim, S.I. Ohmi, K. Tsutsui, H. Iwai, Jpn. J. Appl. Phys. 44, 4032 (2005) W.J. Zhu, T.P. Ma, T. Tamagawa, J. Kim, Y. Di, IEEE Electron Device Lett. 23, 97 (2002) A. Ziani, C. Le Paven-Thivet, L. Le Gendre, D. Fasquelle, J.C. Carru, F. Tessier, J. Pinel, Thin Solid Films 517, 544 (2008) D. Eom, S.Y. No, C.S. Hwang, H.J. Kim, J. Electrochem. Soc. 154, G49 (2007) doi: 10.1149/1.2409889 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Huang, XD | en_HK |
| dc.contributor.author | Lai, PT | en_HK |
| dc.contributor.author | Sin, JKO | en_HK |
| dc.date.accessioned | 2012-05-28T08:20:04Z | - |
| dc.date.available | 2012-05-28T08:20:04Z | - |
| dc.date.issued | 2012 | en_HK |
| dc.identifier.citation | Applied Physics A: Materials Science And Processing, 2012, v. 108 n. 1, p. 229-234 | en_HK |
| dc.identifier.issn | 0947-8396 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/147131 | - |
| dc.description.abstract | Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al 2O 3/LaTiON-LaON/SiO 2/Si (band-engineered MONOS) capacitors. The physical properties of the high-k films were analyzed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. The band profile of this band-engineered MONOS device was characterized by investigating the current-conduction mechanism. By adopting stacked LaTiON/LaON film instead of LaON film as charge-trapping layer, improved electrical properties can be achieved in terms of larger memory window (5.4 V at ±10-V sweeping voltage), higher program speed with lower operating gate voltage (2.1 V at 100-μs +6 V), and smaller charge loss rate at 125 °C, mainly due to the variable tunneling path of charge carriers under program/erase and retention modes (realized by the band-engineered charge-trapping layer), high trap density of LaTiON, and large barrier height at LaTiON/SiO 2 (2.3 eV). © 2012 The Author(s). | en_HK |
| dc.language | eng | en_US |
| dc.publisher | Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm | en_HK |
| dc.relation.ispartof | Applied Physics A: Materials Science and Processing | en_HK |
| dc.rights | The Author(s) | en_US |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | en_US |
| dc.subject | Physics | en_US |
| dc.subject | Condensed Matter | en_US |
| dc.subject | Optical and Electronic Materials | en_US |
| dc.subject | Nanotechnology | en_US |
| dc.subject | Characterization and Evaluation Materials | en_US |
| dc.subject | Surfaces and Interfaces and Thin Films | en_US |
| dc.subject | Operating Procedures and Materials Treatment | en_US |
| dc.title | LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.openurl | http://www.springerlink.com/link-out/?id=2104&code=X350416117W6J7V0&MUD=MP | en_US |
| dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_HK |
| dc.identifier.authority | Lai, PT=rp00130 | en_HK |
| dc.description.nature | published_or_final_version | en_US |
| dc.identifier.doi | 10.1007/s00339-012-6881-y | en_HK |
| dc.identifier.scopus | eid_2-s2.0-84864571606 | en_HK |
| dc.identifier.hkuros | 225919 | - |
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| dc.relation.references | doi: 10.1063/1.3556761 | en_US |
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| dc.relation.references | doi: 10.1063/1.1352688 | en_US |
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| dc.relation.references | doi: 10.1088/0268-1242/24/9/095022 | en_US |
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| dc.relation.references | doi: 10.1103/PhysRevB.79.035306 | en_US |
| dc.relation.references | F.Y. Tian, D. Yang, R.L. Opila, A.V. Teplyakov, Appl. Surf. Sci. 258, 3019 (2012) <Occurrence Type="Bibcode"><Handle>2012ApSS..258.3019T</Handle></Occurrence> | en_US |
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| dc.identifier.spage | 229 | en_HK |
| dc.identifier.epage | 234 | en_HK |
| dc.identifier.eissn | 1432-0630 | en_US |
| dc.identifier.isi | WOS:000306126600033 | - |
| dc.publisher.place | Germany | en_HK |
| dc.description.other | Springer Open Choice, 28 May 2012 | en_US |
| dc.identifier.scopusauthorid | Huang, XD=37057428400 | en_HK |
| dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
| dc.identifier.scopusauthorid | Sin, JKO=7103312667 | en_HK |
| dc.identifier.citeulike | 10498496 | - |
| dc.identifier.issnl | 0947-8396 | - |