File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: An analytical model for the narrow-width effect in ion-implanted MOSFETs

TitleAn analytical model for the narrow-width effect in ion-implanted MOSFETs
Authors
Lai, PTCheng, YC
Issue Date1984
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1984, v. 27 n. 7, p. 639-649 How to Cite?
DOI: http://dx.doi.org/10.1016/0038-1101(84)90134-5
AbstractA closed-form analytical expression is derived to predict the threshold voltage of an ion-implanted narrow-width MOSFET. The method makes use of the Fourier transform to analyse the voltage distribution in the width cross section of the basic MOS device structure. No fitting parameter is necessary, but the dependence of threshold voltage on channel width and substrate bias thus obtained is in reasonable agreement with numerical results. The effects of peak doping, straggle and range of the implantation on the threshold voltage are also taken into account. © 1984.
Persistent Identifierhttp://hdl.handle.net/10722/154831
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457
ISI Accession Number ID
WOS:A1984TQ36100006

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:30:51Z-
dc.date.available2012-08-08T08:30:51Z-
dc.date.issued1984en_US
dc.identifier.citationSolid State Electronics, 1984, v. 27 n. 7, p. 639-649en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154831-
dc.description.abstractA closed-form analytical expression is derived to predict the threshold voltage of an ion-implanted narrow-width MOSFET. The method makes use of the Fourier transform to analyse the voltage distribution in the width cross section of the basic MOS device structure. No fitting parameter is necessary, but the dependence of threshold voltage on channel width and substrate bias thus obtained is in reasonable agreement with numerical results. The effects of peak doping, straggle and range of the implantation on the threshold voltage are also taken into account. © 1984.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleAn analytical model for the narrow-width effect in ion-implanted MOSFETsen_US
dc.typeArticleen_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(84)90134-5-
dc.identifier.scopuseid_2-s2.0-0021458389en_US
dc.identifier.hkuros241279-
dc.identifier.volume27en_US
dc.identifier.issue7en_US
dc.identifier.spage639en_US
dc.identifier.epage649en_US
dc.identifier.isiWOS:A1984TQ36100006-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.issnl0038-1101-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats