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Conference Paper: Two-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage

TitleTwo-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage
Authors
Issue Date1991
Citation
Institute Of Physics Conference Series, 1991, v. 120, p. 311-315 How to Cite?
AbstractThe authors report a novel 2-dimensional electron gas emitter heterojunction bipolar transistor which has a low offset voltage and a high gain. The concept used here is similar to a method used in α-Si/Si bipolar transistors to improve emitter carrier transport.
Persistent Identifierhttp://hdl.handle.net/10722/154951
ISSN
2019 SCImago Journal Rankings: 0.104

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_US
dc.contributor.authorWang, Qen_US
dc.contributor.authorLongenbach, KFen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorWang, WIen_US
dc.date.accessioned2012-08-08T08:31:16Z-
dc.date.available2012-08-08T08:31:16Z-
dc.date.issued1991en_US
dc.identifier.citationInstitute Of Physics Conference Series, 1991, v. 120, p. 311-315en_US
dc.identifier.issn0951-3248en_US
dc.identifier.urihttp://hdl.handle.net/10722/154951-
dc.description.abstractThe authors report a novel 2-dimensional electron gas emitter heterojunction bipolar transistor which has a low offset voltage and a high gain. The concept used here is similar to a method used in α-Si/Si bipolar transistors to improve emitter carrier transport.en_US
dc.languageengen_US
dc.relation.ispartofInstitute of Physics Conference Seriesen_US
dc.titleTwo-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltageen_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026371945en_US
dc.identifier.volume120en_US
dc.identifier.spage311en_US
dc.identifier.epage315en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridWang, Y=7601501822en_US
dc.identifier.scopusauthoridWang, Q=7406911671en_US
dc.identifier.scopusauthoridLongenbach, KF=6603287889en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWang, WI=7501757397en_US
dc.identifier.issnl0951-3248-

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